A semiconductor manufacturing system has a turbine disposed inside a semiconductor manufacturing clean room. A controller is disposed outside the semiconductor manufacturing clean room and is coupled to the turbine through a first cable. A first computer is coupled to the controller through a second cable. The first computer has a web server configured to communicate with the controller via the second cable. A second computer is disposed in the semiconductor manufacturing clean room and is connected to the web server of the first computer. The web server hosts a web page including a reset button configured to issue a reset command to the controller. The web page also displays a status of the turbine.

Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.

Embodiments of the present disclosure relate to the field of semiconductors, and provide a process recipe, a method and a system for generating same, and a semiconductor manufacturing method. The method for generating a diffraction-based process recipe includes: providing a basic process recipe, the basic process recipe is used to form an initial alignment pattern; and performing a feedback correction step for at least one time to adjust the basic process recipe and obtain an actual process recipe, which each time includes: obtaining a first pattern and a second pattern based on the basic process recipe prior to a current feedback correction step, the first pattern is the initial alignment pattern that is developed, the second pattern is the initial alignment pattern that is etched; and adjusting the basic process recipe prior to the current feedback correction step based on a difference between the first pattern and the second pattern.

There is provided a technique that includes at least one load port capable of mounting a substrate storage container that stores a substrate, a controller configured to be capable of performing: a switching control to switch a first function of using the at least one load port to load or unload the substrate storage container and a second function of mounting the substrate storage container on the at least one load port; and an erroneous operation prevention control to execute an erroneous operation prevention operation to the substrate storage container arranged on the at least one load port according to use modes associated with the first function and the second function; and a process chamber configured to process the substrate.

A device includes a substrate, a semiconductor channel over the substrate, and a gate structure over and laterally surrounding the semiconductor channel. The gate structure includes a first dielectric layer over the semiconductor channel, a first work function metal layer over the first dielectric layer, a first protection layer over the first work function metal layer, a second protection layer over the first protection layer, and a metal fill layer over the second protection layer.

A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

A detection method includes: determining process data of a new process; according to the process data of the new process, detecting, by a first production system, whether a wafer carrier type of the new process matches an acceptable level of a corresponding process step or not and whether the new process matches a flag of the corresponding process step or not; if not, determining that the process data does not pass the detection and outputting first detection information; or if the wafer carrier type of the new process matches the acceptable level of the corresponding process step and the new process matches the flag of the corresponding process step, detecting, by a second production system, if the second production system detects a mismatch, determining that the process data does not pass the detection and outputting second detection information.

The method includes the steps of: detecting a part, of a surface of a target, that is located on an inner circumferential side of a predetermined circle centered on a rotation axis and passing the target, by an object detection sensor, at plural rotation positions when at least one of a rotation position of the target about the rotation axis on a substrate placement portion and a rotation position of a detection area about a robot reference axis is changed; calculating a quantity correlated with an index length representing a distance from the robot reference axis to the target when the target is detected by the object detection sensor, for each rotation position; and calculating the positional relationship between the robot reference axis and the rotation axis on the basis of, among the rotation positions, the one at which the quantity correlated with the index length is maximized or minimized.

An inspection system may receive inspection datasets from a defect inspection system associated with inspection of one or more samples, where an inspection dataset of the plurality of inspection datasets associated with a defect includes values of two or more signal attributes and values of one or more context attributes. An inspection system may further label each of the inspection datasets with a class label based on respective positions of each of the inspection datasets in a signal space defined by the two or more signal attributes, where each class label corresponds to a region of the signal space. An inspection system may further segment the inspection datasets into two or more defect groups by training a classifier with the values of the context attributes and corresponding class labels for the inspection datasets, where the two or more defect groups are identified based on the trained classifier.