Patent classifications
G05B2219/45212
CLOUD CONTROLLED LASER FABRICATION
An execution plan segment of an execution plan can be received at a control unit of a computer numerically controlled machine from a general purpose computer. The execution plan segment can define operations for causing movement of a moveable head of the computer numerically controlled machine to deliver electromagnetic energy to effect a change in a material within an interior space of the computer numerically controlled machine. The execution plan segment can include a predefined safe pausing point from which the execution plan can be restarted while minimizing a difference in appearance of a finished work-product relative to if a pause and restart are not necessary. Operations of the computer numerically controlled machine can be commenced only after determining that the execution plan segment has been received up to and including the predefined safe pausing point by the computer numerically controlled machine.
CLOUD CONTROLLED LASER FABRICATION
An execution plan segment of an execution plan can be received at a control unit of a computer numerically controlled machine from a general purpose computer. The execution plan segment can define operations for causing movement of a movable head of the computer numerically controlled machine to deliver electromagnetic energy to effect a change in a material within an interior space of the computer numerically controlled machine. The execution plan segment can include a predefined safe pausing point from which the execution plan can be restarted while minimizing a difference in appearance of a finished work-product relative to if a pause and restart are not necessary. Operations of the computer numerically controlled machine can be commenced only after determining that the execution plan segment has been received up to and including the predefined safe pausing point by the computer numerically controlled machine.
Substrate processing apparatus, substrate processing system, and substrate processing method
It is an object of the present invention to reduce the amount of data used in an apparatus, a system, and a method for performing a substrate processing. In order to achieve this object, a substrate processing apparatus includes one or more processing units each for performing a processing on a substrate and one or more arithmetic processing parts. One or more arithmetic processing parts generate a flow recipe defining a flow of a series of processings for a substrate by combining two or more processing recipes among a plurality of processing recipes each defining a processing condition relating to a processing to be performed on a substrate in the one or more processing units. The plurality of processing recipes include a plurality of liquid processing recipes each defining a condition of a processing to be performed on a substrate by using a processing liquid.
METHODS AND APPARATUSES FOR ETCH PROFILE OPTIMIZATION BY REFLECTANCE SPECTRA MATCHING AND SURFACE KINETIC MODEL OPTIMIZATION
Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, the methods may include modifying one or more values of B so as to reduce a metric indicative of the differences between computed reflectance spectra generated from the model and corresponding experimental reflectance spectra with respect to one or more sets of values of A. In some embodiments, calculating the metric may include an operation of projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the subspace. Also disclosed are etch systems implementing such optimized computer models.
Temperature control method and plasma processing apparatus
A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.
Model-based scheduling for substrate processing systems
For etching tools, a neural network model is trained to predict optimum scheduling parameter values. The model is trained using data collected from preventive maintenance operations, recipe times, and wafer-less auto clean times as inputs. The model is used to capture underlying relationships between scheduling parameter values and various wafer processing scenarios to make predictions. Additionally, in tools used for multiple parallel material deposition processes, a nested neural network based model is trained using machine learning. The model is initially designed and trained offline using simulated data and then trained online using real tool data for predicting wafer routing path and scheduling. The model improves accuracy of scheduler pacing and achieves highest tool/fleet utilization, shortest wait times, and fastest throughput.
Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.
FABRICATION WITH IMAGE TRACING
A method may include generating, by a camera having a view of an interior portion of a computer-numerically-controlled machine, an image comprising a pattern. The image can be transformed into a set of machine instructions for controlling the computer-numerically-controlled machine to effect a change in a material. The change can correspond to at least a portion of the pattern. At least one machine instruction from the set of machine instructions can be executed to control the computer-numerically-controlled machine to effect at least a portion of the change. The execution can include operating, in accordance with the at least one machine instruction, a tool coupled with the computer-numerically-controlled machine. The tool can be configured to effect the change on the material. Related systems and articles of manufacture, including computer program products, are also provided.
HARSH ENVIRONMENT ENCLOSURE
A harsh environment enclosure for use with sensor systems, such as cameras. The enclosure can include a housing having an end wall, sidewalls, a top wall, and a bottom wall. A door is hinged to the top wall. The enclosure can have a linkage assembly including a door lever having an elongate first end portion connected to the door, a laterally extending second end portion, and an elbow positioned therebetween. A pivot arm having a proximal end is connected to an interior surface of the housing and a distal end of the pivot arm is connected to the elbow. An actuator can be connected between the housing and the laterally extending second end portion. The linear actuator can be positioned with respect to the door lever and pivot arm to move the door to an open position when extended and a closed position when retracted.
MULTI-STYLUS ORBITAL ENGRAVING TOOL
A selectable symbol engraving tool for use with a CNC machine. The engraving tool includes a housing and an array of styluses supported in the housing. A pattern disk is rotatably supported in the housing and is connectable to a spindle of the CNC machine. The pattern disk includes a plurality of hole patterns, each selectable via rotation of the spindle and including one or more clearance holes corresponding to a symbol. The array of styluses is positioned to confront a selected one of the plurality of hole patterns such that styluses corresponding to the clearance holes are retracted and the remaining styluses are extended. The extended styluses are operative to engrave the symbol corresponding to the selected hole pattern in a work piece via orbiting about a virtual axis of rotation when the selectable character engraving tool is moved in a circular motion by the CNC machine.