Systems, apparatuses, and methods related to memory bank protection are described. A quantity of errors within a single memory bank can be determined and the determined quantity can be used to further determine whether to access other memory banks to correct the determined quantity. The memory bank protection described herein can avoid a single memory bank of a memory die being a single point of failure (SPOF).

A solid state drive having a drive aggregator and a plurality of component solid state drive, including a first component solid state drive and a second component solid state drive. The drive aggregator has at least one host interface, and a plurality of drive interfaces connected to the plurality of component solid state drives. The drive aggregator is configured to generate, in the second solid state drive, a copy of a dataset that is stored in the first component solid state drive. In response to a failure of the first component solid state drive, the drive aggregator is configured to substitute a function of the first component solid state drive with respect to the dataset with a corresponding function of the second component solid state drive, based on the copy of the dataset generated in the second component solid state drive.

Numerous examples of a precision programming apparatus are disclosed for precisely and quickly depositing the correct amount of charge on the floating gate of a non-volatile memory cell within a vector-by-matrix multiplication (VMM) array in an artificial neural network. In one example, a neuron output circuit for providing a current to program as a weight value in a selected memory cell in a vector-by-matrix multiplication array is disclosed, the neuron output circuit comprising a first adjustable current source to generate a scaled current in response to a neuron current to implement a positive weight, and a second adjustable current source to generate a scaled current in response to a neuron current to implement a negative weight.

A memory system includes a memory device including a plurality of memory units capable of inputting or outputting data individually, and a controller coupled with the plurality of memory units via a plurality of data paths. The controller is configured to perform a correlation operation on two or more read requests among a plurality of read requests input from an external device, so that the plurality of memory units output plural pieces of data corresponding to the plurality of read requests via the plurality of data paths based on an interleaving manner. The controller is configured to determine whether to load map data associated with the plurality of read requests before a count of the plurality of read requests reaches a threshold, to divide the plurality of read request into two groups based on whether to load the map data, and to perform the correlation operation per group.

This document describes aspects of communicating information about repair elements of a memory device. A memory device can include multiple repair elements that can each replace a defective or damaged memory element, such as a memory row, using a repair operation. By knowing a quantity of remaining available repair elements, a user of a memory device can make informed decisions about whether to make a replacement. In operation, a host device can send a command to the memory device requesting repair element information. Logic of the memory device can determine a quantity of repair elements that are available for a repair operation. In some cases, the logic may store this quantity in a register of the memory device. The memory device can signal the quantity of repair elements to the host device in response to the command.

Exemplary methods, apparatuses, and systems include detecting an operation to write dirty data to a cache. The cache is divided into a plurality of channels. In response to the operation, the dirty data is written to a first cache line in the cache, the first cache line being accessed via a first channel. Additionally, a redundant copy of the dirty data is written to a second cache line in the cache. The second cache line serves as a redundant write buffer and is accessed via a second channel, the first and second channels differing from one another. A metadata entry for the second cache line is updated to reference a location of the dirty data in the first cache line.

A method including executing a portion of a service which is part of at least one service provided by a system including a distributed computing platform; determining object capability parameters required to perform the executing; storing information about at least one target host device; generating an announcement message reporting presence of a service type and the object capability parameters; receiving information from other announcement messages; evaluating current host device capability parameters with respect to the object capability parameters; determining when the current host device capability parameters meet a criterion; initiating a migration request message from the object for migration of the object, the object including software code and processing instructions and service function instructions, the migration to a target object host device, when the module capability parameters meet a criterion; and managing the migration of the object to the target host device.

A three-dimensional stacked integrated circuit (3D SIC) that can have at least a first 3D XPoint (3DXP) die and, in some examples, can have at least a second 3DXP die too. In such examples, the first 3DXP die and the second 3DXP die can be stacked. The 3D SIC can be partitioned into a plurality of columns that are perpendicular to each of the stacked dies. In such examples, when a first column of the plurality of columns is determined as failing, data stored in the first column can be replicated to a second column of the plurality of columns. Also, for example, when a part of a first column of the plurality of columns is determined as failing, data stored in the part of the first column can be replicated to a corresponding part of a second column of the plurality of columns.

An apparatus is described. The apparatus includes a processor. The processor includes a memory controller to read and write from a memory. The memory controller includes error correction coding (ECC) circuitry to correct errors in data read from the memory. The processor includes register space to track read data error information. The processor includes an embedded controller. The processor includes local memory coupled to the embedded controller. The embedded controller is to read the read data error information and store the read data error information in the local memory.

A method for configuring a computer system memory, includes powering on the computer system; retrieving options for initializing the computer system; assigning to a first segment of the memory a first pre-defined setting; assigning to a second segment of the memory a second pre-defined setting; and booting the computer system.