A processing system selectively compresses cache lines at a cache or at a memory or encrypts cache lines at the memory based on evictions of entries mapping virtual-to-physical address translations from a translation lookaside buffer (TLB). Upon eviction of a TLB entry, the processing system identifies cache lines corresponding to the physical addresses of the evicted TLB entry and selectively compresses the cache lines to increase the effective storage capacity of the processing system or encrypts the cache lines to protect against vulnerabilities.

An apparatus is provided, connectable to a memory and one or more peripherals. The apparatus includes translation request circuitry to receive a translation request from one of the peripherals to translate an input address within an input domain to an output address within an output domain. Signing circuitry generates a signature of at least part of the output address using a private key. Translation response circuitry responds to the translation request by transmitting to the one of the peripherals a translation response, including the output address and the signature. Gateway circuitry receives access requests to the memory. Each of the access requests comprises a desired memory address in the output domain and a signature of the desired memory address. The gateway performs validation of the signature of the desired memory address using the private key and in response to the validation of a given access request failing, performs an error action.

An apparatus includes a CPU core, a first cache subsystem coupled to the CPU core, and a second memory coupled to the cache subsystem. The first cache subsystem includes a configuration register, a first memory, and a controller. The controller is configured to: receive a request directed to an address in the second memory and, in response to the configuration register having a first value, operate in a non-caching mode. In the non-caching mode, the controller is configured to provide the request to the second memory without caching data returned by the request in the first memory. In response to the configuration register having a second value, the controller is configured to operate in a caching mode. In the caching mode the controller is configured to provide the request to the second memory and cache data returned by the request in the first memory.

A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

A technology for estimating one or more cache hit rates. An implementation includes receiving a request-response pair, calculating a fingerprint for the request-response pair, storing the fingerprint, and determining whether the fingerprint is a member of a bloom filter.

A trigger rate associated with a scan operation of a set of memory pages of a data block is identified. The trigger rate is compared to a threshold rate to determine that a condition is satisfied. In response to satisfying the condition, a refresh operation is executed on the set of memory pages of the data block.

A first error rate based on a first read operation performed on a memory device is obtained. An individual data unit of the memory device that satisfies a first threshold criterion associated with a defect candidate is determined. A defect verification operation on the individual data unit to obtain a second error rate is performed. The individual data unit that satisfies a second threshold criterion associated with a defect is determined.

Methods, systems, and devices for hazard detection in a multi-memory device are described. A device may receive a first command that indicates a first bank address, a first row address, and a first column address. Based on the first bank address, the device may select a buffer for a hazard detection procedure that detects hazardous commands. The device may compare, as part of the hazard detection procedure, the first row address and the first column address from the first command with a second row address and a second column address from a second command in the buffer. The device may determine whether the first command and the second command are hazardous commands based on comparing the first row address and the first column address from the first command with the second row address and the second column address from the second command.

A method includes training a recurrent neural network by monitoring data in a memory of a first server as the first server executes jobs and by determining an amount of computing resources used by the first server while executing the jobs and applying the recurrent neural network to data in the memory to predict an amount of computing resources that the first server will use when executing a first future job. The method also includes, in response to determining that execution of the first future job did not meet a performance criterion, making a change to the first server. The method further includes further training the recurrent neural network using a reinforcement learning technique, applying the recurrent neural network to determine that the change should be made to a second server, and in response, making the change to the second server before the second server executes a second future job.

The disclosed embodiments relate to logging activities of memory devices and adjusting the operation of a controller based on the activities. In one embodiment, a method comprises monitoring, by a memory device, die temperatures and data sizes of commands issued to the memory device; determining, by the memory device, a target size for a buffer based on the die temperatures and data sizes; and adjusting, by the memory device, a current size of the buffer to meet the target size.