G06F11/3037

Reduced parity data management
11704196 · 2023-07-18 · ·

A method includes receiving, by a memory sub-system, host data to be written to a plurality of blocks of a memory device associated with a memory sub-system, where each of the plurality of blocks are coupled to one of a plurality of word lines of the memory device. The method can further include generating parity data for each word line of the block; dividing the parity data into one of either a first word line parity set or a second word line parity set; generating a reduced parity data set with exclusive or parity values for the first word line parity set and for the second word line parity set; and writing the reduced parity data set in the memory sub-system.

Charge loss scan operation management in memory devices

A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying an operating temperature of the memory device; determining that the operating temperature satisfies a temperature condition; modifying a scan frequency parameter for performing a scan operation on representative blocks of a set of blocks in the memory device; and performing the scan operation at a frequency identified by the scan frequency parameter.

ERROR EVALUATION FOR A MEMORY SYSTEM

Methods, systems, and devices for error evaluation for a memory system are described. A memory device may be configured to monitor access errors of the memory device to evaluate a likelihood that such errors are related to a failure of the memory device itself or to a failure outside the memory device. For example, a memory device may monitor a respective quantity of errors for each of a set of banks and, if the memory device detects that multiple banks are associated with a threshold quantity of access errors, the memory device may infer the presence of a failure outside the memory device. The memory device may store an indication of such a detection, which may be used to support failure diagnosis or resolution efforts, such as refraining from replacing a memory device when access errors are more likely to be the result of a system failure.

SYSTEMS AND METHODS TO MANAGE MEMORY DURING POWER DOWN AND STORAGE
20230222042 · 2023-07-13 ·

Systems and methods described herein may enable memory maintenance operations to be performed on a memory device in compliance with a time interval having a duration based on a temperature of the memory device. A system may include a memory device and a memory controller communicatively coupled to the memory device. The memory controller may receive a temperature measurement indicative of a present temperature of the memory device and determine a memory management interval based on the temperature measurement. The memory controller may perform a memory management operation based on the memory management interval. Sometimes, the memory controller powers on the memory device to perform the memory management operation on the memory device.

Logging pages accessed from I/O devices

Systems and methods of tracking page state changes are provided. An input/output is communicatively coupled to a host having a memory. The I/O device receives a command from the host to monitor page state changes in a region of the memory allocated to a process. The I/O device, bypassing a CPU of the host, modifies data stored in the region based on a request, for example, received from a client device via a computer network. The I/O device records the modification to a bitmap by setting a bit in the bitmap that corresponds to a location of the data in the memory. The I/O device transfers contents of the bitmap to the CPU, wherein the CPU completes the live migration by copying sections of the first region indicated by the bitmap to a second region of memory. In some implementations, the process can be a virtual machine, a user space application, or a container.

Selective sampling of a data unit during a program erase cycle based on error rate change patterns

A processing device, operatively coupled with the memory device, is configured to determine a first error rate associated a first set of pages of a plurality of pages of a data unit of a memory device, and a second error rate associated with a second set of pages of the plurality of pages of the data unit, determine a first pattern of error rate change for the data unit based on the first error rate and the second error rate, and responsive to determining that the first pattern of error rate change corresponds to a predetermined second pattern of error rate change, perform an action pertaining to defect remediation with respect to the data unit.

Managing probabilistic data integrity scan intervals
11699498 · 2023-07-11 · ·

Exemplary methods, apparatuses, and systems include receiving read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets of sequences of read operations. An aggressor read operation is selected from the current set. A position in the sequence of read operations in the current set is determined such that the position that is preceded by at least a minimum number of read operations following a previous data integrity scan in a previous set of read operations. A data integrity scan is performed on a victim of the aggressor read operation at the determined position in the sequence of the current set of read operations.

Method of verifying access of multi-core interconnect to level-2 cache
11550646 · 2023-01-10 · ·

The present disclosure provides a method and a system of verifying access by a multi-core interconnect to an L2 cache in order to solve problems of delays and difficulties in locating errors and generating check expectation results. A consistency transmission monitoring circuitry detects, in real time, interactions among a multi-core interconnects system, all single-core processors, an L2 cache and a primary memory, and sends collected transmission information to an L2 cache expectation generator and a check circuitry. The L2 cache expectation generator obtains information from a global memory precise control circuitry according to a multi-core consistency protocol and generates an expected result. The check circuitry is responsible for comparing the expected result with an actual result, thus implementing determination of multi-core interconnect's access accuracy to the L2 cache without delay.

Execution circuits using discardable state
11550651 · 2023-01-10 · ·

There is provided execution circuitry. Storage circuitry retains a stored state of the execution circuitry. Operation receiving circuitry receives, from issue circuitry, an operation signal corresponding to an operation to be performed that accesses the stored state of the execution circuitry from the storage circuitry. Functional circuitry seeks to perform the operation in response to the operation signal by accessing the stored state of the execution circuitry from the storage circuitry. Delete request receiving circuitry receives a deletion signal and in response to the deletion signal, deletes the stored state of the execution circuitry from the storage circuitry. State loss indicating circuitry responds to the operation signal when the stored state of the execution circuitry is not present and is required for the operation by indicating an error. In addition, there is provided a data processing apparatus comprising issue circuitry to issue an operation to execution circuitry. The execution circuitry stores a stored state that is accessed during performance of the operation and error detecting circuitry detects an indication of an error from the execution circuitry that the stored state is required for performance of the operation and that the stored state has been deleted.

Methods for activity-based memory maintenance operations and memory devices and systems employing the same
11550650 · 2023-01-10 · ·

Memory devices and methods of operating memory devices in which maintenance operations can be scheduled on an as-needed basis for those memory portions where activity (e.g., operations in excess of a predetermined threshold) warrants a maintenance operation are disclosed. In one embodiment, an apparatus comprises a memory including a memory location, and circuitry configured to determine a count corresponding to a number of operations at the memory location, to schedule a maintenance operation for the memory location in response to the count exceeding a first predetermined threshold, and to decrease the count by an amount corresponding to the first predetermined threshold in response to executing the scheduled maintenance operation. The circuitry may be further configured to disallow, in response to determining that the count has reached a maximum permitted value, further operations at the memory location until after the count has been decreased.