A system and methods are disclosed that generate a physical roadmap for the connectivity of a network, such as a network-on-chip (NoC). The roadmap includes a set of possible positions for placement of edges and nodes, which are known to be an acceptable and good position for placement of these network elements, that honors the constraints of the network. These known positions are made available to the system for synthesis of the network and generating the connectivity and placement based on the physical roadmap.

A system and methods are disclosed that generate a physical roadmap for the connectivity of a network, such as a network-on-chip (NoC). The roadmap includes a set of possible positions for placement of edges and nodes, which are known to be an acceptable and good position for placement of these network elements, that honors the constraints of the network. These known positions are made available to the system for synthesis of the network and generating the connectivity and placement based on the physical roadmap.

An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

The present disclosure provides a method and an apparatus for generating a layout of a semiconductor device. The method includes placing a first cell and a second cell adjacent to the first cell, placing a first conductive pattern in a first track of the first cell extending in a first direction, wherein the first conductive pattern is configured as an input terminal or an output terminal of the first cell, placing a second conductive pattern in a first track of the second cell extending in the first direction, wherein the second conductive pattern is configured as an input terminal or an output terminal of the second cell, and aligning the first conductive pattern with the second conductive pattern.

The present disclosure provides a method and an apparatus for generating a layout of a semiconductor device. The method includes placing a first cell and a second cell adjacent to the first cell, placing a first conductive pattern in a first track of the first cell extending in a first direction, wherein the first conductive pattern is configured as an input terminal or an output terminal of the first cell, placing a second conductive pattern in a first track of the second cell extending in the first direction, wherein the second conductive pattern is configured as an input terminal or an output terminal of the second cell, and aligning the first conductive pattern with the second conductive pattern.

Microelectronic circuit com-prises a plurality of logic units and register circuits, arranged into a plu-rality of processing paths, and a plu-rality of monitoring units associated with respective ones of said processing paths. Each of said monitoring units is configured to produce an observation signal as a response to anomalous opera-tion of the respective processing path. Each of said plurality of logic units belongs to one of a plurality of delay classes according to an amount of delay that it is likely to generate. Said de-lay classes comprise first, second, and third classes, of which the first class covers logic units that are likely to generate longest delays, the second class covers logic units that are likely to generate shorter delays than said first class, and the third class covers logic units that are likely to generate shorter delays than said second class. At least some of said plurality of pro-cessing paths comprise logic units be-longing to said second class but are without monitoring units. At least some of said plurality of processing paths comprise logic units belonging to said third class but have monitoring units associated with them.

Microelectronic circuit com-prises a plurality of logic units and register circuits, arranged into a plu-rality of processing paths, and a plu-rality of monitoring units associated with respective ones of said processing paths. Each of said monitoring units is configured to produce an observation signal as a response to anomalous opera-tion of the respective processing path. Each of said plurality of logic units belongs to one of a plurality of delay classes according to an amount of delay that it is likely to generate. Said de-lay classes comprise first, second, and third classes, of which the first class covers logic units that are likely to generate longest delays, the second class covers logic units that are likely to generate shorter delays than said first class, and the third class covers logic units that are likely to generate shorter delays than said second class. At least some of said plurality of pro-cessing paths comprise logic units be-longing to said second class but are without monitoring units. At least some of said plurality of processing paths comprise logic units belonging to said third class but have monitoring units associated with them.

A method of manufacturing a semiconductor device includes reducing errors in a migration of a first netlist to a second netlist, the first netlist corresponding to a first semiconductor process technology (SPT), the second first netlist corresponding to a second SPT, the first and second netlists each representing a same circuit design, the reducing errors including: inspecting a timing constraint list corresponding to the second netlist for addition candidates; generating a first version of the second netlist having a first number of comparison points relative to a logic equivalence check (LEC) context, the first number of comparison points being based on the addition candidates; performing a LEC between the first netlist and the first version of the second netlist, thereby identifying migration errors; and revising the second netlist to reduce the migration errors, thereby resulting in a second version of the second netlist.

A method of manufacturing a semiconductor device includes reducing errors in a migration of a first netlist to a second netlist, the first netlist corresponding to a first semiconductor process technology (SPT), the second first netlist corresponding to a second SPT, the first and second netlists each representing a same circuit design, the reducing errors including: inspecting a timing constraint list corresponding to the second netlist for addition candidates; generating a first version of the second netlist having a first number of comparison points relative to a logic equivalence check (LEC) context, the first number of comparison points being based on the addition candidates; performing a LEC between the first netlist and the first version of the second netlist, thereby identifying migration errors; and revising the second netlist to reduce the migration errors, thereby resulting in a second version of the second netlist.