Broadly speaking, embodiments of the present technique provide apparatus and methods for improved wear-levelling in (volatile and non-volatile) memories. In particular, the present wear-levelling techniques comprise moving static memory states within a memory, in order to substantially balance writes across all locations within the memory.

A computing device may determine a respective disk access usage of flash memory of the computing device by each of a plurality of applications. The computing device may compare the respective disk access usage of the flash memory by each of the plurality of applications with a respective application-specific disk access overuse threshold to determine disk access overuse of the flash memory by an application of the plurality of applications. The computing device may, in response to determining the disk access overuse of the flash memory by the application, terminate the application.

A method of operating a storage device, including a first memory region having a lowest bit density, a second memory region having a medium bit density, and a third memory region having a highest bit density, includes determining a hotness of a logical address received with a write command and data to be written, from a host, based on the determined hotness being greater than a first hotness threshold, determining whether a wear level of the first memory region is greater than a wear threshold, and increasing the first hotness threshold and storing the data in the second memory region based on the wear level of the first memory region being greater than a threshold.

A controller includes a central processing unit (CPU) configured to insert a latest received logical address, received together with a write command and data from a host, into a logical address list; a hotness determining circuit configured to assign a maximum weight to the latest received logical address, decrease weights of received logical addresses included in the logical address list by a decay factor, and sum weights of the received logical addresses having values, equal to a value of the latest received logical address, to determine hotness of the latest received logical address; and a parameter adjustment circuit decreasing a magnitude of the decay factor based on the repeatability index of the received logical addresses included in the logical address list, wherein the CPU is configured to control the memory device to store the data in one of the memory regions based on the hotness.

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising receiving a memory access command specifying a logical address; determining a physical address associated with the logical address; determining a portion of the memory device that is referenced by the physical address; determine an endurance factor associated with the portion; and increasing, by a value derived from the endurance factor, a media management metric associated with a management unit of the memory device, wherein the management unit is referenced by the physical address.

Methods, systems, and devices for signal development caching in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). In various examples, accessing the memory device may include accessing information from the signal development cache, or the memory array, or both, based on various mappings or operations of the memory device.

A memory sub-system can allocate a first portion of blocks of a memory device for storage of file system metadata based on a file system and a capacity of the memory device, write video data received from a host within a second portion of the blocks at a first data density, and write file system metadata within the first portion of the blocks at a second data density lesser than the first data density.

An electronic system includes: a key value storage device, configured to transfer user data, the key value storage device including: a non-volatile memory array accessed by a key value address, an interface circuit, coupled to the non-volatile memory array, configured to receive a key value transfer command, a volatile memory, coupled to the interface circuit and the non-volatile memory array, configured to reduce a number of copies of the user data in the non-volatile memory array, and a device processor, coupled to the interface circuit, configured to manage the non-volatile memory array, the volatile memory, and the interface circuit by a key value index tree, including a key value translation block, to access the user data.

A technique to control write operations in a logical partition. For example, a device can receive a user specified write threshold for the logical partition that is hosted on a pool of memory cells shared by a plurality of logical partitions in wear leveling. An accumulated amount of data written into the memory cells according to write requests addressing the logical partition is tracked. In response to the accumulated amount reaches the write threshold, further write requests addressing the logical partition can be blocked, rejected, and/or ignored. For example, the logical partition can be used to buffer data for time shift in playing back content streaming from a server. Write operations for time shift can be limited via the user specified threshold to prevent overuse of the total program erasure budget of the pool of memory cells shared with other logical partitions.

Methods, systems, and devices for memory operations are described. A memory system may write data to sequential physical addresses of the memory system based on receiving multiple write commands, where the sequential physical addresses may be associated with sequential logical addresses. Based on writing the data, the memory system may receive a read command for data stored in the memory system, where the read command may include a logical address. The memory system may determine a physical address of the memory system where the data is stored based on the received logical address, a last logical address written at the memory system, and a sequence number group associated with the last logical address. Based on determining the physical address, the memory system may read the data stored at the physical address.