Method and systems for a storage system are provided. Simulated cache blocks of a cache system are tracked using cache metadata while performing a workload having a plurality of storage operations. The cache metadata is segmented, each segment corresponding to a cache size. Predictive statistics are determined for each cache size using a corresponding segment of the cache metadata. The predictive statistics are used to determine an amount of data that is written for each cache size within certain duration. The process then determines if each cache size provides an endurance level after executing a certain number of write operations, where the endurance level indicates a desired life-cycle for each cache size.

A method of wear leveling for a data storage device is provided. The data storage device includes a non-volatile memory having a plurality of blocks. A portion of the blocks not having any valid data are defined as spare blocks, and the spare blocks are associated with a spare pool. The method includes the steps of: maintaining a management table recording a plurality of physical block numbers and a plurality of block statuses corresponding to the blocks; selecting a first spare block having a first smallest physical block number as a current temporary block; receiving a write command from a host; determining whether data in the write command shall be written into the current temporary block; if false, selecting a second spare block having a second smallest physical block number as a next temporary block; and writing the data into the next temporary block.

A flash memory management method, including: the data to be stored are organized in logic blocks; the memory is divided into pages; each page is divided into frames, each frame being capable of containing at least one data block and at least two frame metadata words; each page comprises at least one page metadata word which contains, when a page is written, a value of a counter of the number of written pages; a writing of a logic block into the memory goes along with a programming of a first frame metadata word with an identifier of this logic block; and the page into which the writing is to be performed is selected as being that having its first metadata word containing the maximum value of the counter of written pages from among all pages.

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising responsive to receiving a memory access command, determining a portion of the memory device that is referenced by a logical address specified by the memory access command; determining an endurance factor associated with the portion; and modifying, based on a value derived from the endurance factor, a media management metric associated with the portion of the memory device.

Apparatuses and methods related to generating memory characteristic based access commands generating the access commands can include providing a first access command to a memory system of a plurality of memory systems, receiving, at a host coupled to the memory system, data corresponding to characteristics of a memory device of the memory system from a controller of the memory system, where the characteristics are based at least in part on processing of the first access command. Generating access commands can also include generating, at the host, a second access command based on the data and transmitting the second access command to at least the memory system.

A method, system and non-transitory computer readable instructions for update optimization comprising, receiving application metadata wherein the application metadata includes a likelihood of future data change metric for one or more regions of application data. Determining from the application metadata which regions of the application data have a high likelihood of data change and generating variable data chunk boundaries based on the regions of the application data that have the high likelihood of data change.

A method for processing a memory page in memory, where the memory page in the memory includes an idle single-level cell (SLC) memory page, an active SLC memory page, an inactive SLC memory page, and a multi-level cell (MLC) memory page, and when a quantity of idle SLC memory pages of any virtual machine (VM) is less than a specified threshold, the processing method includes converting one idle SLC memory page to two MLC memory pages, copying data in two inactive SLC memory pages to the two converted MLC memory pages, and releasing storage space of the two inactive SLC memory pages to obtain two idle SLC memory pages.

Methods, systems, and devices for operating a memory device are described. One method includes caching data of a memory cell at a sense amplifier of a row buffer upon performing a first read of the memory cell; determining to perform at least a second read of the memory cell after performing the first read of the memory cell; and reading the data of the memory cell from the sense amplifier for at least the second read of the memory cell.

A garbage data scrubbing method includes obtaining an input/output (IO) busy/idle status of a terminal at a current moment, where the IO busy/idle status includes a busy state and an idle state. When the IO busy/idle status of the terminal at the current moment is the idle state, a discard message is delivered to a storage device, where the discard message includes an initial address and a size of to-be-scrubbed physical space in the storage device, and where the discard message is used to unbind a mapping relationship between a physical address of the to-be-scrubbed physical space and a corresponding logical address.

A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.