According to one embodiment, a nonvolatile semiconductor memory device is connectable to a controller. The nonvolatile semiconductor memory device includes a cell array and a control circuit. The cell array includes a plurality of blocks. The control circuit executes program operations for a plurality of pages included in a write destination block of the blocks, in a certain program order. The write destination block is selected by the controller from the blocks. The control circuit is configured to notify a page address corresponding to a next program operation with respect to the write destination block to the controller.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

Described apparatuses and methods form adaptive cache lines having a configurable capacity from hardware cache lines having a fixed capacity. The adaptive cache lines can be formed in accordance with a programmable cache-line parameter. The programmable cache-line parameter can specify a capacity for the adaptive cache lines. The adaptive cache lines may be formed by combining respective groups of fixed-capacity hardware cache lines. The quantity of fixed-capacity hardware cache lines included in respective adaptive cache lines may be based on the programmable cache-line parameter. The programmable cache-line parameter can be selected in accordance with characteristics of the cache workload.

Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Disclosed are techniques for managing context information for data stored within a computing device. According to some embodiments, the method can include the steps of (1) loading, into a volatile memory of the computing device, the context information from a non-volatile memory of the computing device, where the context information is separated into a plurality of portions, and each portion of the plurality of portions is separated into a plurality of sub-portions, (2) writing transactions into a log stored within the non-volatile memory, and (3) each time a condition is satisfied: identifying a next sub-portion to be processed, where the next sub-portion is included in the plurality of sub-portions of a current portion being processed, identifying a portion of the context information that corresponds to the next sub-portion, converting the portion from a first format to a second format, and writing the portion into the non-volatile memory.

A memory device may receive a read request describing a logical address at the memory device. The memory device may obtain a table entry associated with the logical address. The table entry comprises a physical address corresponding to the logical address and a write temperature data indicating a write temperature for the logical address. The memory device may determine a corrected threshold voltage for reading the physical address based at least in part on the write temperature data and read the physical address using the corrected threshold voltage.

A method for compressing data in a local cache of a web server is described. A local cache compression engine accesses values in the local cache and determines a cardinality of the values of the local cache. The local cache compression engine determines a compression rate of a compression algorithm based on the cardinality of the values of the local cache. The compression algorithm is applied to the cache based on the compression rate to generate a compressed local cache.

A memory system may include: a nonvolatile memory device comprising a plurality of memory blocks, each block having a plurality of pages, each page having a plurality of memory cells, wherein the plurality of memory block includes an SLC (Single Level Cell) block and an MLC (Multi-Level Cell) block; and a controller suitable for programming input data transmitted from a host to both the SLC block and the MLC block in response to a first program command, and invalidating the input data programmed in the SLC block at a time point when the program operation for the MLC block is completed, when the memory system is powered on after an SPO (Sudden Power-Off) occurred while the program operation was performed on both the SLC block and the MLC block, the controller may perform a recovery operation to the MLC block based on valid data programmed in the SLC block.

A method of performing a copy-on-write on a shared memory page is carried out by a device communicating with a processor via a coherence interconnect. The method includes: adding a page table entry so that a request to read a first cache line of the shared memory page includes a cache-line address of the shared memory page and a request to write to a second cache line of the shared memory page includes a cache-line address of a new memory page; in response to the request to write to the second cache line, storing new data of the second cache line in a second memory and associating the second cache-line address with the new data stored in the second memory; and in response to a request to read the second cache line, reading the new data of the second cache line from the second memory.