A method is described that includes deciding to enter a lower power state, and, shutting down a memory channel in a computer system in response where thereafter other memory channels in the computer system remain active so that computer remains operative while the memory channel is shutdown.

A memory system includes: a memory controller which executes a data access process with an external device using an access unit; a first memory which is connected to the memory controller via a bus and has a first latency; and a second memory which is connected to the memory controller via a bus and has a second latency longer than the first latency. The access unit comprises a first access size assigned to the first memory and a second access size assigned to the second memory. The memory controller executes a data access process with the first memory using the first access size, and executes a data access process with the second memory using the second access size.

Systems, methods, and computer program products to perform an operation comprising processing a first logical partition on a shared processor for the duration of a dispatch cycle, issuing, by a hypervisor, at a predefined time prior to completion of the dispatch cycle, a lightweight hypervisor decrementer (HDEC) interrupt, and responsive to the lightweight HDEC interrupt, initiating an asynchronous hardware operation on the shared processor prior to completion of the dispatch cycle.

A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as far memory. Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as near memory.

An electronic device includes a semiconductor device, wherein the semiconductor device includes: a word line driving unit for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit; a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit, arranged between the first cell array and the second cell array, for generating a bias voltage based on currents flowing through the first reference resistance element included in the first cell array and the second reference resistance element included in the second cell array; a first read control unit; and a second read control unit.

Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.

An electronic device comprising a semiconductor memory unit that includes a resistance variable element configured to be changed in a resistance value according to a value of data stored therein; a first reference resistance element having a first resistance value; a second reference resistance element having a second resistance value larger than the first resistance value; and a comparison unit configured to receive a voltage corresponding to the resistance value of the resistance variable element through a first input terminal and a second input terminal thereof, a voltage corresponding to the first resistance value of the first reference resistance element through a third input terminal, and a voltage corresponding to the second resistance value of the second reference resistance element through a fourth input terminal, the comparison unit configured to output a result of comparing inputs to the first input terminal and the second input terminal and inputs to the third input terminal and fourth input terminal.

Write operations on main memory comprise predicting a last write in a dirty cache line. The predicted last write indicates a predicted pattern of the dirty cache line before the dirty cache line is evicted from a cache memory. Further, the predicted pattern is compared with a pattern of original data bits stored in the main memory for identifying changes to be made in the original data bits. Based on the comparison, an optimization operation to be performed on the original data bits is determined. The optimization operation modifies the original data bits based on the predicted pattern of a last write cache line before the last write cache line is evicted from the cache memory.

A memory device and method for altering a performance characteristic of a memory array to increase a rate at which the memory device writes data in response to the memory device experiencing a demand for bandwidth above a threshold. The memory device may include a memory controller and a memory array, which may include memristive memory elements. To alter a performance characteristic, for example, the memristive memory elements may be written at sub-full resistive states which have a smaller difference between high and low resistive states, and/or the memory controller may disable a subset of memory elements and/or memory cells along a bit line and/or word line of the memory array. The subset of memory elements may be re-enable in response to the demand for bandwidth falling below the threshold, and data may be moved and/or rearranged within the memory device when the subset of memory elements is re-enabled. Altering the performance characteristic may increase a rate at which the memory device writes data.

Subject matter disclosed herein relates to management of a memory device.