Various embodiments comprise apparatuses and methods including a method of reconfiguring partitions in a memory device as directed by a host. The method includes managing commands through a first interface controller to mapped portions of a first memory not having an attribute enhanced set, and mapping portions of a second memory having the attribute enhanced set through a second interface controller. Additional apparatuses and methods are described.

A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.

According to an embodiment, a semiconductor integrated circuit includes a nonvolatile semiconductor memory device and an integral control processing device. The nonvolatile semiconductor memory device includes a memory region formed of a data storage region to store data and a flag region in which a first value is set when data writing to the data storage region starts and a second value is set when data writing to the data storage region ends, and a controller including an error code detection circuit to detect an error code. An integral control processing device integrally controls an overall. system by exchanging various kinds of signals and data with the controller.

A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as far memory. Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as near memory.

A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.

Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.

Systems, methods, and computer program products to perform an operation comprising processing a first logical partition on a shared processor for the duration of a dispatch cycle, issuing, by a hypervisor, at a predefined time prior to completion of the dispatch cycle, a lightweight hypervisor decrementer (HDEC) interrupt, and responsive to the lightweight HDEC interrupt, initiating an asynchronous hardware operation on the shared processor prior to completion of the dispatch cycle.

A memory having a delayed write-back to the array of data corresponding to a previously opened page allows delays associated with write-back operations to be avoided. After an initial activation opens a first page and the read/write operations for that page are complete, write-back of the open page to the array of memory cells is delayed until after completion of a subsequent activate operation that opens a new page. Techniques to force a write-back in the absence of another activate operation are also disclosed.

An instruction set architecture of a data processing system includes one or more persistent atomic instructions that provide failure-safe atomicity. When issued, a sequence of operations associated with the persistent atomic instruction are performed and first data, associated with a first address in a persistent memory of the data processing system, is written to a point of persistence in the data processing system. Access to data associated with the first address is controlled such that the first data is not available to other execution threads of the data processing system until completion of writing the first data to the point of persistence. The point of persistence may be the persistent memory itself or a persist buffer. The persist buffer may be a volatile or non-volatile buffer. One or more monitors may control access to data at memory addresses dependent upon a designated state of exclusivity.

An apparatus is described. The apparatus includes a memory controller to interface with a memory side cache and an NVRAM system memory. The memory controller has logic circuitry to favor items cached in the memory side cache that are expected to be written to above items cached in the memory side cache that are expected to only be read from.