A thin-film transistor (TFT) array substrate is provided. The TFT array substrate is structured to change the way that sub-pixels are arranged so that during a displaying period of a frame of image, the sub-pixels that have inconsistent brightness/darkness become alternate with each other spatially so that a displaying defect of vertical bright/dark lines can be improved and the overall resistance of the data line can be reduced to thereby reduce resistance-capacitance delay and prevent incorrect charging at a tail end of a scan line or a data line.

An electronic device includes a first source group and a second source group, each of which includes a plurality of source channels, and a gamma block that receives first to 2i-th initial voltages (i being an integer of 1 or more), outputs first to 2i-th intermediate voltages by amplifying the first to i-th initial voltages, and outputs first to i-th gamma voltages to the first source group by buffering the first to 2i-th intermediate voltages, and a first buffer block that receives the first to 2i-th intermediate voltages from the gamma block and buffers the first to 2i-th intermediate voltages so as to be output to the second source group, and the gamma block may include a first resistor string including a plurality of resistors connected between nodes from which the first to i-th gamma voltages are output.

An array substrate has a display area and a bonding region. The display area includes a distal region, a proximal region, and a middle region therebetween. The array substrate includes a base, a common electrode located in the display area, a connecting lead disposed outside the distal region, a conductive frame at least partially surrounding the display area, and at least one first common signal line, at least one second common signal line and at least one third common signal line. The first common signal line, the second common signal line and the third common signal line are respectively coupled to portions of the common electrode located in the distal region, the proximal region and the middle region. The first common signal line is coupled to the connecting lead. The connecting lead and the portion of the common electrode located in the distal region are coupled to the conductive frame.

The resolution of a low-resolution image is made high and a stereoscopic image is displayed. Resolution is made high by super-resolution processing. In this case, the super-resolution processing is performed after edge enhancement processing is performed. Accordingly, a stereoscopic image with high resolution and high quality can be displayed. Alternatively, after image analysis processing is performed, edge enhancement processing and super-resolution processing are concurrently performed. Accordingly, processing time can be shortened.

The resolution of a low-resolution image is made high and a stereoscopic image is displayed. Resolution is made high by super-resolution processing. In this case, the super-resolution processing is performed after edge enhancement processing is performed. Accordingly, a stereoscopic image with high resolution and high quality can be displayed. Alternatively, after image analysis processing is performed, edge enhancement processing and super-resolution processing are concurrently performed. Accordingly, processing time can be shortened.

A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of onion of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10.sup.−18 A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.

A processing system comprises a first integrated circuit (IC) and a second IC. The first IC comprises first image processing circuitry, first display panel driver circuitry, and first communication circuitry. The first image processing circuitry is configured to generate a first overlay image by overlaying a first partial input image with a first image element based on first partial input image data representing the first partial input image and first image element data representing the first image element. The first display panel driver circuitry is configured to drive a display panel based on the first overlay image. The first communication circuitry is configured to output second image element data representing a second image element to the second IC.

A gate driver according to an exemplary embodiment of the present inventive concept includes a pull-up-pull-down circuit configured to pull up a gate signal to a high level of a first clock signal in a first duration and configured to pull down the gate signal to a low level of the first clock signal in a second duration, and a pull-down boosting circuit configured to output a first off voltage to the pull-up-pull-down part in the second duration in response to a second clock signal.

A display method of a display panel, a display device, and a server are disclosed. The display method divides an initial image into a plurality of sub-frame images having a same frequency, and the frequency of the sub-frame images is a multiple of a frequency of the initial image. The sub-frame images are input into the display panel in sequence and are combined to obtain a target image. The target image is used to drive the display panel to display the initial image, thereby reducing a refresh rate of the display panel for inputting data. Therefore, the display panel can realize low frequency input and prevent frame loss.

A display device includes: pixel electrodes including a first pixel electrode and a second pixel electrode adjacent to the first pixel electrode in a first direction; switching elements including a first switching element coupled to the first pixel electrode and a second switching element coupled to the second pixel electrode; gate lines including a first gate line coupled to the first switching element and a second gate line coupled to the second switching element; a gate driver supplying a gate signal to the gate lines; and drive electrodes including a first drive electrode and a second drive electrode adjacent to the first drive electrode in the first direction. The first drive electrode overlaps the first and second pixel electrodes, and the second gate line. The second drive electrode overlaps the first gate line. The gate driver supplies the gate signal to the first and second gate lines simultaneously.