G11B2005/0008

MAMR writer with low resistance MAMR stack

The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a MAMR stack disposed between the main pole and the trailing shield at the MFS. The MAMR stack includes a seed layer and at least one magnetic layer. The seed layer is fabricated from a thermally conductive material having electrical resistivity lower than that of the main pole. The seed layer has a stripe height greater than a stripe height of the at least one magnetic layer. With the extended seed layer, the bias current from the trailing shield to the main pole spreads further away from the MFS along the extended seed layer before flowing into the main pole, reducing temperature rise at or near the MAMR stack, leading to improved write head reliability.

HIGH-BANDWIDTH STO BIAS ARCHITECTURE WITH INTEGRATED SLIDER VOLTAGE POTENTIAL CONTROL

Disclosed herein are circuits, architectures, and methods that provide for the control of a data storage device write head's trailing shield and main pole potential with respect to the disk using circuitry that is integrated with circuitry used to bias a spin torque oscillator (STO) apparatus. Various embodiments include slider connections with STO bias circuitry that resides in a read/write integrated circuit, which has a programmable circuit that generates a bias current with overshoot (bias kicks). Also disclosed are circuits that may be incorporated into a slider to mitigate radio-frequency interference.

Magnetoresistive device with bias magnetic field generation unit having main and side portions partially surrounding free layer perimeter
10672421 · 2020-06-02 · ·

A magnetoresistive device includes an MR element and a bias magnetic field generation unit. The MR element includes a free layer shaped to be long in one direction. The bias magnetic field generation unit includes a ferromagnetic layer for generating a bias magnetic field. The ferromagnetic layer includes two main portions, a first side portion, and a second side portion arranged to surround the perimeter of the free layer. In any cross section perpendicular to the longitudinal direction of the free layer, a shortest distance between the first side portion and the free layer and a shortest distance between the second side portion and the free layer are 35 nm or less.

High-bandwidth STO bias architecture with integrated slider voltage potential control

Disclosed herein are circuits, architectures, and methods that provide for the control of a data storage device write head's trailing shield and main pole potential with respect to the disk using circuitry that is integrated with circuitry used to bias a spin torque oscillator (STO) apparatus. Various embodiments include slider connections with STO bias circuitry that resides in a read/write integrated circuit, which has a programmable circuit that generates a bias current with overshoot (bias kicks). Also disclosed are circuits that may be incorporated into a slider to mitigate radio-frequency interference.

Adaptive bias control for magnetic recording head

A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.

Adaptive Bias Control for Magnetic Recording Head

A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.

Magnetic disk device

According to one embodiment, a magnetic disk device includes a magnetic disk, a recording head and a controller configured to control the recording head. The recording head includes a high-frequency oscillator disposed in a write gap formed between a main magnetic pole and a return magnetic pole, and a bias voltage application circuit configured to apply a bias voltage to the high-frequency oscillator. The controller includes a bias voltage controller configured to change a bias voltage to be applied to the high-frequency oscillator in accordance with a sampling frequency of data before the data is recorded on the magnetic disk by the recording head.

HIGH-BANDWIDTH STO BIAS ARCHITECTURE WITH INTEGRATED SLIDER VOLTAGE POTENTIAL CONTROL

Disclosed herein are circuits, architectures, and methods that provide for the control of a data storage device write head's trailing shield and main pole potential with respect to the disk using circuitry that is integrated with circuitry used to bias a spin torque oscillator (STO) apparatus. Various embodiments include slider connections with STO bias circuitry that resides in a read/write integrated circuit, which has a programmable circuit that generates a bias current with overshoot (bias kicks). Also disclosed are circuits that may be incorporated into a slider to mitigate radio-frequency interference.

MAGNETORESISTIVE DEVICE
20190293732 · 2019-09-26 · ·

A magnetoresistive device includes an MR element and a bias magnetic field generation unit. The MR element includes a free layer shaped to be long in one direction. The bias magnetic field generation unit includes a ferromagnetic layer for generating a bias magnetic field. The ferromagnetic layer includes two main portions, a first side portion, and a second side portion arranged to surround the perimeter of the free layer. In any cross section perpendicular to the longitudinal direction of the free layer, a shortest distance between the first side portion and the free layer and a shortest distance between the second side portion and the free layer are 35 nm or less.

High-bandwidth STO bias architecture with integrated slider voltage potential control

Disclosed herein are circuits, architectures, and methods that provide for the control of a data storage device write head's trailing shield and main pole potential with respect to the disk using circuitry that is integrated with circuitry used to bias a spin torque oscillator (STO) apparatus. Various embodiments include slider connections with STO bias circuitry that resides in a read/write integrated circuit, which has a programmable circuit that generates a bias current with overshoot (bias kicks). Also disclosed are circuits that may be incorporated into a slider to mitigate radio-frequency interference.