The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head having a first current flow in a cross-track direction through a trailing shield. In one or more embodiments, a second current flows in a cross-track direction around the main pole. The magnetic recording device comprises a main pole disposed between a trailing shield, a leading shield, and side shields. A trailing gap is disposed between the side shields and the trailing shield. A high moment seed layer is disposed between the main pole and the trailing shield. A first insulation layer is disposed within the trailing shield and directs the first current through the trailing shield, guided to the proximity of the main pole. A second insulation layer, disposed below the trailing shield, directs the second current through the trailing shield, or alternatively through the side shields and around the main pole.

Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

The present embodiments relate to a PMR write head with a trailing shield that comprises a FeCoNiM composition. The FeCoNiM composition can be formed via an electroplating process by adding Fe.sup.2+, Co.sup.2+, Ni.sup.2+ and a transition metal salt to an aqueous solution comprised of other additives in an electroplating cell that has an Ni or Co as the anode. The plated HD magnetic material as the trailing shield in a PMR writer can minimize a wide area track erasure (WATE). Further, a high moment high damping shield can lower bit error rate (BER) and increase aerial density capability (ADC) of the write head.

The present embodiments relate to a PMR write head with a trailing shield that comprises a FeCoNiM composition. The FeCoNiM composition can be formed via an electroplating process by adding Fe.sup.2+, Co.sup.2+, Ni.sup.2+ and a transition metal salt to an aqueous solution comprised of other additives in an electroplating cell that has an Ni or Co as the anode. The plated HD magnetic material as the trailing shield in a PMR writer can minimize a wide area track erasure (WATE). Further, a high moment high damping shield can lower bit error rate (BER) and increase aerial density capability (ADC) of the write head.

A magnetic head to detect a change of a magnetic field caused by a passing of a magnetic recording medium may include a head main body including a core provided with a gap and a coil which is wound around the core; a demodulation circuit structured to demodulate an analog signal outputted from the coil; an encryption circuit structured to encrypt a demodulated signal outputted from the demodulation circuit; a head case in which the head main body is accommodated; and a filter circuit which is connected between the coil and the demodulation circuit and is structured to remove noise from the analog signal. An electronic component which structures the filter circuit may be accommodated in the head case.

The use of supermalloy-like materials such as NiFeMe where Me is one or more of Mo, Cr, and Cu for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. Moreover, the side shield may comprise a stack in which a Ni, Fe, Co, FeNi, CoFe, or FeCo is sandwiched between two NiFeMe layers to enhance the bias field on an adjacent free layer. Including NiFeMe in a side shield results in an increase in readback amplitude under the same asymmetric sigma. For these sensors, the signal to noise ratio was higher and the bit error rate was lower than with conventional materials in the side shield. A method is disclosed for forming a magnetic bit sensor having supermalloy-like materials in the side shields.

The use of supermalloy-like materials such as NiFeMe where Me is one or more of Mo, Cr, and Cu for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. Moreover, the side shield may comprise a stack in which a Ni, Fe, Co, FeNi, CoFe, or FeCo is sandwiched between two NiFeMe layers to enhance the bias field on an adjacent free layer. Including NiFeMe in a side shield results in an increase in readback amplitude under the same asymmetric sigma. For these sensors, the signal to noise ratio was higher and the bit error rate was lower than with conventional materials in the side shield. A method is disclosed for forming a magnetic bit sensor having supermalloy-like materials in the side shields.

A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.