Disclosed herein are methods of forming one or more transducer elements in a transducer region of a slider by electrodepositing one or more metal ions from an ionic liquid solvent, and related sliders.

A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a stacked body provided between the first and second magnetic poles. The stacked body includes first to fourth magnetic layers, and first to fifth non-magnetic layers. The second non-magnetic layer is in contact with the second and first magnetic layers. The third non-magnetic layer is in contact with the third and second magnetic layers. The fourth non-magnetic layer is in contact with the fourth and third magnetic layers. A fourth thickness of the fourth magnetic layer along a first direction from the first magnetic pole to the second magnetic pole is not less than 0.5 times and not more than 1.6 times a first thickness of the first magnetic layer along the first direction. A second thickness of the second magnetic layer along the first direction is less than the first thickness.

The present disclosure generally relates to magnetic recording devices with stable magnetization. The magnetic recording device comprises a lower leading shield, an upper leading shield disposed on the lower leading shield, a main pole disposed above the upper leading shield, a trailing shield disposed above the main pole and upper leading shield, and an upper return pole disposed above the trailing shield. A first non-magnetic layer is disposed between the lower leading shield and the upper leading shield, and a second non-magnetic layer is disposed between the trailing shield and the upper return pole. The lower leading shield has a different domain state than the upper leading shield, and the trailing shield and the upper leading shield have a same domain state. The materials and thickness of the first and second non-magnetic layers result in magnetostatic coupling or anti-ferromagnetic coupling.

A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

Devices having an air bearing surfaces (ABS), the devices including a near field transducer (NFT) that includes a disc having a front edge; a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that expend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 10 nm to 50 nm.

The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.

A PMR writer with a capacitive one turn design is disclosed with a one turn top coil above the main pole (MP), a one turn bottom coil below the MP, and where a capacitor (C_bot) is electrically connected to the bottom coil thereby shunting the write current (lw) in the bottom coil above certain frequencies proximate to 1 GHz. The C_bot is made of TiO.sub.2 or Al-doped TiO.sub.2, for example, with a dielectric constant >10. As a result, the writer behaves like a 1+1T writer at lw frequencies substantially below 1 GHz, as a 1+0.xT writer at lw frequencies proximate to 1 GHz, and like a 1+0T writer in an overshoot region of the lw. Accordingly, better trailing shield field gradient, signal-to-noise ratio, and bit error rate during high frequency operation are achieved without compromising saturation speed and adjacent track interference for an overall improvement in performance.

A lateral spin valve reader and fabrication method thereof. The method includes forming an injector, a detector and a common channel layer that extends from the injector to the detector. The method also includes forming a first channel layer between the common channel layer and at least one of the injector or the detector with the first channel layer in contact with the common channel layer, thereby providing an interface between the first channel layer and the common channel layer.

A method provides a magnetic read apparatus. A sensor stack is deposited. The read sensor is defined from the stack such that the sensor has sides forming a junction angle of 75 degrees-105 degrees from a sensor bottom. Defining the sensor includes performing a first ion mill at a first angle and a first energy and performing a second ion mill at a second angle greater than the first angle and at a second energy less than the first energy. The first angle is 5 degrees-30 degrees from normal to the top surface. After the first ion mill, less than half of the stack's bottom layer depth remains unmilled. Magnetic bias structure(s) adjacent to the sides may be formed. The magnetic bias structure(s) include a side shielding material having at least one of the saturation magnetization greater than 800 emu/cm.sup.3 and an exchange length less than five nanometers.