According to one embodiment, a magnetic disk device applies a bias voltage for measurement to a high frequency assist element according to a setting instruction of the bias voltage to measure a conduction current by in a recording head, calculates the resistance value in the supply path of the bias voltage from a relationship between the measured current and the bias voltage for measurement, and changes the bias voltage applied at the time of data recording based on the calculated resistance value.

A microwave-assisted magnetic recording (MAMR) write head has a spin-torque oscillator (STO) and a ferromagnetic compensation layer between the write pole and trailing shield. The compensation layer is separated from the free layer by a nonmagnetic barrier layer that prevents spin-polarized electrons from the free layer from reaching the compensation layer. The compensation layer may be located between the write pole and the free layer. Electrons become spin-polarized by the compensation layer and are reflected back from the write pole across a nonmagnetic spacer layer. This causes the magnetization of the compensation layer to flip and become antiparallel to the magnetization of the free layer. The compensation layer thus generates a DC offset field that compensates for the negative effect of the DC shunting field from the free layer.

A microwave-assisted magnetic recording (MAMR) write head has a spin-torque oscillator (STO) and a ferromagnetic compensation layer between the write pole and trailing shield. The compensation layer is separated from the free layer by a nonmagnetic barrier layer that prevents spin-polarized electrons from the free layer from reaching the compensation layer. The compensation layer may be located between the write pole and the free layer. Electrons become spin-polarized by the compensation layer and are reflected back from the write pole across a nonmagnetic spacer layer. This causes the magnetization of the compensation layer to flip and become antiparallel to the magnetization of the free layer. The compensation layer thus generates a DC offset field that compensates for the negative effect of the DC shunting field from the free layer.

According to one embodiment, a magnetic head includes a reproducing portion. The reproducing portion includes first to fourth magnetic portions and a stacked body. The third magnetic portion is provided between the first and second magnetic portions. The fourth magnetic portion is provided between the first and second magnetic portions. A second direction from the third magnetic portion toward the fourth magnetic portion crosses a first direction from the first magnetic portion toward the second magnetic portion. The stacked body is provided between the first and second magnetic portions in the first direction and between the third and fourth magnetic portions in the second direction. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic portion in the first direction, and an intermediate layer provided between the first and second magnetic layers in the first direction.

According to one embodiment, a magnetic head includes a reproducing portion. The reproducing portion includes first to fourth magnetic portions and a stacked body. The third magnetic portion is provided between the first and second magnetic portions. The fourth magnetic portion is provided between the first and second magnetic portions. A second direction from the third magnetic portion toward the fourth magnetic portion crosses a first direction from the first magnetic portion toward the second magnetic portion. The stacked body is provided between the first and second magnetic portions in the first direction and between the third and fourth magnetic portions in the second direction. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic portion in the first direction, and an intermediate layer provided between the first and second magnetic layers in the first direction.

According to one embodiment, a magnetic head includes a reproducing portion. The reproducing portion includes first to fourth magnetic portions and a stacked body. The third magnetic portion is provided between the first and second magnetic portions. The fourth magnetic portion is provided between the first and second magnetic portions. A second direction from the third magnetic portion toward the fourth magnetic portion crosses a first direction from the first magnetic portion toward the second to magnetic portion. The stacked body is provided between the first and second magnetic portions in the first direction and between the third and fourth magnetic portions in the second direction. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic portion in the first direction, and an intermediate layer provided between the first and second magnetic layers in the first direction.

According to one embodiment, a magnetic head includes a reproducing portion. The reproducing portion includes first to fourth magnetic portions and a stacked body. The third magnetic portion is provided between the first and second magnetic portions. The fourth magnetic portion is provided between the first and second magnetic portions. A second direction from the third magnetic portion toward the fourth magnetic portion crosses a first direction from the first magnetic portion toward the second to magnetic portion. The stacked body is provided between the first and second magnetic portions in the first direction and between the third and fourth magnetic portions in the second direction. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the second magnetic portion in the first direction, and an intermediate layer provided between the first and second magnetic layers in the first direction.

A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

A data storage device is disclosed comprising a head actuated over a disk, wherein the head comprises a spin torque oscillator (STO) element. The data storage device further comprises a differential amplifier comprising a first input coupled to a first end of the STO element and a second input coupled to a second end of the STO element. A bias current is applied to the STO element, and the bias current is adjusted. A resistance delta of the STO element is detected based on an output of the differential amplifier, wherein the resistance delta corresponds to a bias current level when the STO begins to oscillate.