A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. The SHE layer may contact one or both of the MP and TS, and has a front side at the air bearing surface (ABS) or recessed therefrom. A first current (I.sub.1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. A second current (I.sub.2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. The SHE layer may contact one or both of the MP and TS, and has a front side at the air bearing surface (ABS) or recessed therefrom. A first current (I.sub.1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. A second current (I.sub.2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers (SHE1 and SHE2) with an intermediate conductor layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. SHE1 is a negative Spin Hall Angle (SHA) material while SHE2 is a positive SHA material. Current (I.sub.a) flows from SHE1 across the conductor layer to SHE2. In one embodiment, spin polarized current in SHE1 applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, and spin polarized current in SHE2 generates spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate. In alternative embodiments, one of SHE1 and SHE2 is omitted so that only one of the MP write field and TS return field is enhanced.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers (SHE1 and SHE2) with an intermediate conductor layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. SHE1 is a negative Spin Hall Angle (SHA) material while SHE2 is a positive SHA material. Current (I.sub.a) flows from SHE1 across the conductor layer to SHE2. In one embodiment, spin polarized current in SHE1 applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, and spin polarized current in SHE2 generates spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate. In alternative embodiments, one of SHE1 and SHE2 is omitted so that only one of the MP write field and TS return field is enhanced.

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V.sub.jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V.sub.jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers with an intermediate insulation layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. Both of the SHE layers are a Spin Hall Angle (SHA) material with an absolute value for SHA>0.05. The SHE layers have front sides at the air bearing surface (ABS) or recessed therefrom, and backsides up to 80 nm from the ABS. Current (I.sub.SHE) is applied in a cross-track direction and synchronized with the write current. A first SHE layer generates transverse spin transfer torque that tilts a local MP magnetization at the MP trailing side to enhance the MP write field, and the second SHE layer generates transverse spin transfer torque that tilts a local TS magnetization at the TS bottom surface to increase the TS return field.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers with an intermediate insulation layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. Both of the SHE layers are a Spin Hall Angle (SHA) material with an absolute value for SHA>0.05. The SHE layers have front sides at the air bearing surface (ABS) or recessed therefrom, and backsides up to 80 nm from the ABS. Current (I.sub.SHE) is applied in a cross-track direction and synchronized with the write current. A first SHE layer generates transverse spin transfer torque that tilts a local MP magnetization at the MP trailing side to enhance the MP write field, and the second SHE layer generates transverse spin transfer torque that tilts a local TS magnetization at the TS bottom surface to increase the TS return field.