A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

A variable-resistance nonvolatile memory element 11 of the present disclosure has a stack 30 including at least a magnetization fixed layer 31, an intermediate layer 32, and a storage layer 33, and a nonmagnetic material 36 is dispersed in at least one of the magnetization fixed layer 31 and the storage layer 33.

A recording head has a near-field transducer that extends a first distance away from a media-facing surface. Two subwavelength focusing mirrors are at an end of a waveguide proximate the media-facing surface and extend a second distance away from the media-facing surface that is less than the first distance. The subwavelength mirrors are on opposite crosstrack sides of the near-field transducer and separated from each other by a crosstrack gap. The subwavelength focusing mirrors each include a first material at the media-facing surface and a plasmonic material that covers an edge of the subwavelength focusing mirror that faces the near-field transducer. The first material is more mechanically robust than the plasmonic material.

A manufacturing method for a magnetoresistive element includes: a step of forming a stack; a step of forming an insulating film to cover the stack; a step of forming an initial magnetic layer to cover the stack and the insulating film so that a thickness of the initial magnetic layer in a first direction is greater than a thickness of the stack in the first direction; a step of forming an organic material film on the initial magnetic layer; and an etching step of etching a part of the initial magnetic layer and the organic material film by ion beam etching so that the initial magnetic layer becomes a pair of magnetic layers.

A tunneling device includes a first semiconductor portion disposed on a first oxide substrate, a second semiconductor portion disposed on the first semiconductor portion, and an intermediate layer disposed between the first semiconductor portion and second semiconductor portion. The intermediate layer is a natural oxide film obtained by naturally oxidizing one surface of the second semiconductor portion for a predetermined time.

Aspects of the present disclosure provide various magnetic recording slider structures and fabrication methods that can reduce head overcoat (HOC) thickness without significantly reducing the lifetime and reliability of a slider by using a protective cap placed on preselected locations on the outermost surface or HOC of the slider. A slider includes a writer comprising an energy-assisted recording element. The writer is configured to store information on a magnetic medium using the energy-assisted recording element. The slider includes a head overcoat (HOC) layer providing an outermost media facing surface. The slider further includes a protective cap positioned on the HOC layer to at least partially cover the energy-assisted recording element, the protective cap including a preselected shape configured to protect the energy-assisted recording element.

A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

The present disclosure generally relates to a tape drive including a tape head. The tape head comprises at least one same gap verify (SGV) module comprising a plurality of write transducer and read transducer pairs disposed on a substrate. In each pair, the write transducer comprises a write pole having a height, and the read transducer comprises a first shield disposed adjacent to the write pole. The write pole and the first shield of each pair are spaced apart a distance greater than or equal to about 20% of the height of the write pole. The SGV module is configured to write data to a tape using the write transducer of each pair and read verify the data written on the tape using the read transducer of each pair such that the write transducer and read transducer of each pair are concurrently operable.