The present disclosure generally relates to a tape drive including a tape head. The tape head comprises at least one same gap verify (SGV) module comprising a plurality of write transducer and read transducer pairs disposed on a substrate. Each pair comprises a null shield disposed between the write transducer and the read transducer. The null shield is used to create a null region, or a region where write flux goes to zero, and comprises laminated antiferromagnetic coupling materials to protect writer flux from going to the read transducer. The read transducer is disposed in the null region. The SGV module is configured to write data to a tape using the write transducer of each pair and read verify the data written on the tape using the read transducer of each pair such that the write transducer and read transducer of each pair are concurrently operable.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

A magnetic recording medium includes a substrate; a lower base layer formed on the substrate; and a (001) oriented L1.sub.0 magnetic layer formed on the lower base layer and including a first magnetic layer formed on the lower base layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing C, and a second magnetic layer formed on the first magnetic layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing oxide or nitride, the second magnetic layer further containing one or more elements selected from a group consisting of Mg, Ni, Zn, Ge, Pd, Sn, Ag, Re, Au and Pb as an additive.

Example read transducers, data storage devices, and methods to provide an angled free layer for generating and decoding multi-level read signals are described. The read transducer includes a free layer having a magnetization bias sensitive to an external magnetic field and the direction of the magnetization bias forms an acute angle relative to a surface of the non-volatile storage medium generating the external magnetic field. The read transducer also includes a pinned layer having a fixed magnetization and a direction of the fixed magnetization forms a right angle with the magnetization bias of the free layer. The read transducer targets a readback location on a track boundary between adjacent tracks and generates a read signal indicative of perpendicular and cross-track fields of the adjacent tracks.

A method according to one embodiment includes forming a first portion of a thin film writer structure on a substantially planar portion of a substrate such that planes of deposition of the first portion of the writer structure are substantially parallel to a plane of the substrate; forming a portion of a write gap of the writer structure at an angle of greater than 0° relative to the substantially planar portion of the substrate; and causing the writer structure to tilt at an angle relative to the plane of the substrate such that a plane of deposition of the write gap is oriented about perpendicular to a final media-facing surface of the writer structure.

A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.

Magnetic memory devices include a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. At least one of the free layer and the pinned layer includes a first vertical magnetic layer on the tunnel barrier layer and including boron (B), and a second vertical magnetic layer on the first vertical magnetic layer and having a lower B content than the first vertical magnetic layer. The first vertical magnetic layer is between the tunnel barrier layer and the second vertical magnetic layer, and a thickness of the second vertical magnetic layer is thinner than a thickness of the first vertical magnetic layer.