Patent classifications
G11B5/746
Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.
Patterned thermal absorption layer for granular storage media
A heat-assisted magnetic recording device includes a granular magnetic recording layer and a thermal absorption layer formed on top of the magnetic recording layer. The thermal absorption layer is patterned to include rows extending in a cross-track direction of the magnetic media, each adjacent pair of the rows being separated from one another by an insulating material.
TECHNIQUE OF HIGH-SPEED MAGNETIC RECORDING BASED ON MANIPULATING PINNING LAYER IN MAGNETIC TUNNEL JUNCTION-BASED MEMORY BY USING TERAHERTZ MAGNON LASER
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.
Radially patterned media for circumferentially constrained grain growth
A method of forming a patterned media includes constraining growth of magnetic grains in a down-track direction without constraining the growth in a radial direction to cause the magnetic grains to align in rows extending in the radial direction. The patterned media may allow for data track radial width to be defined independent of grain size.
ON HEAD MICROELECTRONICS FOR WRITE SYNCHRONIZATION
The presently disclosed technology teaches integrating disc drive electronics into a transducer head. Decreased electrical transit times and data processing times can be achieved by placing the electronics on or within the transducer head because electrical connections may be made physically shorter than in conventional systems. The electronics may include one or more of a control system circuit, a write driver, and/or a data buffer. The control system circuit generates a modified clock signal that has a fixed relation to phase and frequency of a bit-detected reference signal that corresponds to positions of patterned bits on the disc. The write driver writes outgoing data bits received from an external connection to off-head electronics directly to the writer synchronized with the modified clock signal. The data buffer stores and converts digital data bits sent from the off-head electronics to an analog signal that is synchronized with the modified clock signal.
EMBEDDED DISCONNECTED CIRCUITS IN MAGNETIC STORAGE MEDIA OF DATA STORAGE DEVICES
Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.
Embedded disconnected circuits in magnetic storage media of data storage devices
Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.
Technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.
Methods of using embedded disconnected circuits in magnetic storage media of data storage devices
Disclosed herein are methods of using embedded disconnected circuits (EDC) in magnetic storage media to assist in reading data from and writing data to the magnetic storage media. A wireless activation signal is used to activate an EDC in a magnetic storage media. Once activated, the EDC may assist to record data in and/or read data from one or more memory locations of the magnetic storage media.
NOVEL TECHNIQUE OF HIGH-SPEED MAGNETIC RECORDING BASED ON MANIPULATING PINNING LAYER IN MAGNETIC TUNNEL JUNCTION-BASED MEMORY BY USING TERAHERTZ MAGNON LASER
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.