A peak location calculation device includes a peak value detection block that detects a plurality of candidates for a peak value of intensity of laser light received by an imaging unit consisting of an imaging element formed of a plurality of pixels, and a peak location calculation block that calculates an approximation function that approximates an intensity distribution of the laser light using the plurality of candidates for peak values detected by the peak value detection block. The peak location calculation block calculates the approximation function that minimizes an error between intensity values of the plurality of candidates for the peak value and values of the approximation function.

A peak location calculation device includes a peak value detection block that detects a plurality of candidates for a peak value of intensity of laser light received by an imaging unit consisting of an imaging element formed of a plurality of pixels, and a peak location calculation block that calculates an approximation function that approximates an intensity distribution of the laser light using the plurality of candidates for peak values detected by the peak value detection block. The peak location calculation block calculates the approximation function that minimizes an error between intensity values of the plurality of candidates for the peak value and values of the approximation function.

A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.

A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.

Systems and methods of laser bias calibration are presented. A preamplifier circuit may include a laser voltage monitor circuit and a laser bias control circuit configured to automatically adjust an output laser bias threshold voltage based on a monitored laser voltage. The laser bias control circuit may include a first differentiator circuit, a second differentiator circuit, and a threshold detection circuit. The preamplifier circuit may be utilized in a heat assisted magnetic recording device.

Systems and methods of laser bias calibration are presented. A preamplifier circuit may include a laser voltage monitor circuit and a laser bias control circuit configured to automatically adjust an output laser bias threshold voltage based on a monitored laser voltage. The laser bias control circuit may include a first differentiator circuit, a second differentiator circuit, and a threshold detection circuit. The preamplifier circuit may be utilized in a heat assisted magnetic recording device.

An apparatus comprises a laser diode configured to generate modulated light during a write operation in response to receiving modulated current having a mean amplitude that varies or is constant. A slider is configured for heat-assisted magnetic recording and to receive the modulated light. A writer heater of the slider is configured to receive power during the write operation having a magnitude that varies or is constant. A sensor is situated on or within the slider. The sensor is configured to produce a sensor signal representative of output optical power of the laser diode. Measuring circuitry is coupled to the sensor and configured to measure a change in the sensor signal indicative of a laser mode hop during the write operation.

Pseudorandom bit sequences are recorded to a heat-assisted recording medium at a laser power that is stepped while recording the pseudorandom bit sequences. The pseudorandom bit sequences are read from the heat-assisted recording medium to determine timing differences between bits written before and after the laser power is stepped. A thermal gradient of bits written to the heat-assisted recording medium is determined based on the timing differences.

[Object] To propose a control apparatus, a control system and a control method which are capable of appropriately determining an irradiation period in a scene in which light is radiated at the same time as imaging.

[Solution] A control apparatus including: a light source control unit configured to determine a period in accordance with a period between an exposure start timing of a first line in an image pickup element and an exposure end timing of a second line in the image pickup element as an irradiation period during which a light source unit is caused to radiate light. The second line is a line in which start of exposure in one frame is earlier than in the first line.

[Object] To propose a control apparatus, a control system and a control method which are capable of appropriately determining an irradiation period in a scene in which light is radiated at the same time as imaging.

[Solution] A control apparatus including: a light source control unit configured to determine a period in accordance with a period between an exposure start timing of a first line in an image pickup element and an exposure end timing of a second line in the image pickup element as an irradiation period during which a light source unit is caused to radiate light. The second line is a line in which start of exposure in one frame is earlier than in the first line.