A recording layer for an optical data recording medium according to one embodiment of the present invention makes it possible to record an information signal by irradiation with laser beam. The recording layer for an optical data recording medium comprises metal oxides including a Mn oxide, a W oxide, and a Sn oxide. The atomic ratio of Mn with respect to the total number of atoms of metal elements constituting the metal oxides is 3-40 atm %.

A recording layer for an optical data recording medium is described. Recording is performed by irradiating the recording layer with a laser beam. The recording layer contains a W oxide, an Fe oxide, and at least one of a Ta oxide and a Nb oxide. The recording layer contains 10-60 atomic % of Fe and a total of 3-50 atomic % of Ta and Nb relative to the total metal atoms therein.

Provided is a MnZnO sputtering target which can be used in DC sputtering, and a production method for the target. The MnZnO sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 110.sup.3 .Math.cm or less.

The present invention relates to a method for nanomodulating metal films by means of high-vacuum cathode sputtering of metals, and to stencils of anodized Al. As an example of the use of these nanomodulated metal films, the synthesis or production of a magnetically weak film by means of cathode sputtering, which film can he used as a magnetic field sensor, and a metal nanomodulated stencil are analyzed.

An optical recording medium includes a first disk, a second disk, and an adhesive layer for bonding the first disk to the second disk. The first disk and the second disk each include a substrate having a first surface and a second surface and having a gradient on an outer peripheral portion of the second surface, two or more information signal layers disposed on the first surface, an intermediate layer disposed between adjacent information signal layers, and a cover layer covering the two or more information signal layers and the intermediate layer. The second surface of the substrate included in the first disk faces the second surface of the substrate included in the second disk with the adhesive interposed therebetween.

The present invention relates to a read-only optical information recording medium in which at least one reflection film and at least one light transmission layer are laid in order on a substrate and from which information is reproduced by blue laser. The reflection film includes a metal oxide containing Sn and Zn or a metal oxide containing In. The reflection film has a film thickness of 20 nm or more and 70 nm or less.

An SbTe-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of SbTe-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the SbTe-based alloy particles is 3 m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 m or less and a standard deviation thereof is less than 0.20. When the average grain size of the SbTe-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved SbTe-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Provided is an optical recording medium capable of shortening tact time. The optical recording medium includes at least one recording layer. The recording layer contains an oxide of Bi.

An information recording medium includes three or more information layers. The three or more information layers include a first information layer including a first dielectric film, a recording film, and a second dielectric film in this order. The first dielectric film contains an oxide of D1. The D1 represents at least one element selected from a first group consisting of Nb, Mo, Ta, W, Ti, Bi, and Ce. The recording film contains at least W, Cu, Mn, and oxygen and M. The M represents at least one element selected from a second group consisting of Nb, Mo, Ta, and Ti. The W, the Cu, the Mn, and the M except the oxygen in the recording film satisfy a following formula (1):

W.sub.xCu.sub.yMn.sub.zM.sub.100-x-y-z (atom %)(1) wherein x, y, and z satisfy 15x60, yz, 0<z40, and 60x+y+z98.

A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0b/(a+b)0.6, (2) 0(c+d)/(a+b+c+d+e)0.5, (3) 0b50, (4) 0c40, (5) 0d45, (6) 0e40, and (7) 20b+c+d+e80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.