An electronic device includes an operation control circuit and an input data generation circuit. The operation control circuit generates a detection signal and an internal masking signal based on a masking signal and data during a write operation. The input data generation circuit converts input data based on the internal masking signal to generate converted data. In addition, the input data generation circuit selects and outputs either the converted data or drive data as the input data, which are input to a data storage circuit, based on the detection signal.

A memory device includes: a normal cell region suitable for storing write data and outputting read data; a parity cell region suitable for storing write parity bits and outputting read parity bits; a pattern generation circuit suitable for generating test data whose value is sequentially increased, and providing the test data as the write data, in a first test mode; an error correction circuit suitable for generating the write parity bits based on the write data, correcting an error of the read data based on the read parity bits, and outputting the error-corrected data; and an output circuit suitable for compressing the error-corrected data and outputting the compressed data, wherein the output circuit is further suitable for compressing the read parity bits output from the parity cell region to output the compressed data, in the first test mode.

Read operations are performed in a multi-plane memory device. A state machine interfaces an external controller to each plane of memory cells to allow reading from selected word lines in the planes. In one approach, different types of read operations are performed in different planes, such as a multi-level cell read, e.g., a lower, middle or upper page read and a single-level cell (SLC) read. When the read operation in one plane uses fewer read voltages than another plane, the read data can be output early from the one plane while read operations continue on the other plane. The external controller can also command a cache release for one plane after outputting data from the caches of another plane. Read voltages can be set for each plane in a respective set of registers.

A method and apparatus for writing data to a memory device are provided that do not change the precharge states for a bit line pair in a current write cycle if the current data bit is unchanged from the preceding write cycle.

Examples of the present disclosure provide apparatuses and methods related to performing swap operations in a memory. An example apparatus might include a first group of memory cells coupled to a first sense line and configured to store a first element. An example apparatus might also include a second group of memory cells coupled to a second sense line and configured to store a second element. An example apparatus might also include a controller configured to cause the first element to be stored in the second group of memory cells and the second element to be stored in the first group of memory cells by controlling sensing circuitry to perform a number operations without transferring data via an input/output (I/O) line.

The present disclosure includes apparatuses and methods related to mask patterns generated in memory from seed vectors. An example method includes performing operations on a plurality of data units of a seed vector and generating, by performance of the operations, a vector element in a mask pattern.

A semiconductor system includes a semiconductor device suitable for not performing an internal refresh operation when entering a self-refresh mode in response to a self-refresh command, and cutting off input of an auto-refresh command when exiting the self-refresh mode.

According to various embodiments, a data processing device is described comprising a memory configured to store data words in the form of at least two respective shares, a logic circuit configured to receive the at least two shares of at least one of the data words and to process the shares to generate at least two shares of a result data word, a remasking circuit configured to receive at least two shares of at least one of the data words and refresh the shares and an output circuit configured to store the at least two shares of the result data word or to store the refreshed at least two shares depending on a control sequence specifying a sequence of real operations and dummy operations.

Ternary content-addressable memory (TCAM) devices are described. The TCAMs described herein are designed to perform write operations—including data writes and mask writes—in a single clock cycle. For example, data input is written in a row of the TCAM during the first portion of a clock cycle, and a mask is written in another row of the TCAM during the second portion of the clock cycle, for example immediately after or after a programmable delay from the data write. In one implementation, a first bus is used both for data write and key search operations, and a second bus is used both for mask write and search masking operations. In another implementation, a first bus is used both for data write and key search operations, a second bus is used for mask write operations, and a third bus is used for search masking operations.

Apparatuses, systems, and methods for error correction. A memory array may be coupled to an error correction code (ECC) circuit along a read bus and a write bus. The ECC circuit includes a read portion and a write portion. As part of a mask write operation, read data and read parity may be read out along the read bus to the read portion of the ECC circuit and write data may be received along data terminals by the write portion of the ECC circuit. The write portion of the ECC circuit may generate amended write data based on the write data and the read data, and may generate amended parity based on the read parity and the amended write data. The amended write data and amended parity may be written back to the memory array along the write bus.