Embodiments provide one write operation circuit, which includes: a serial-to-parallel conversion circuit that performs serial-to-parallel conversion on a first DBI data of a DBI port to generate a second DBI data for transfer by a DBI signal line, and that generates an input data of a data buffer module depending on the second DBI data; a data buffer module that determines whether to flip a global bus depending on the input data of the data buffer module; the DBI decoding module that decodes a global bus data according to the second DBI data, and writes the decoded data into a memory bank, where decoding includes determining whether to flip the global bus data; and a precharge module that is coupled to a precharge signal line and that sets the initial state of the global bus to high.

An electronic device may include: a column control circuit configured to generate a column control pulse and a mode register enable signal, each with a pulse that is generated based on logic levels of a chip selection signal and a command address; and a control circuit configured to generate a read control signal to perform a read operation and a mode register read operation by delaying the column control pulse based on a logic level of the mode register enable signal and configured to generate a mode register control signal to perform the mode register read operation by delaying the column control pulse based on a logic level of the mode register enable signal.

A semiconductor system includes a memory controller and a memory apparatus. The memory controller provides at least first to third command address signals. The memory apparatus performs a burst read operation based on the first and second command address signals, and terminates the burst read operation by receiving the third command address signal twice. The memory apparatus continuously initializes an internal circuit that is performing the burst read operation in a section the third command address signal is received twice.

A memory is provided that is configured to practice both a normal read operation and also a burst mode read operation. A column multiplexer selects from a plurality of columns using a pair of pass transistor for each column. The column multiplexer drives a true input node and a complement input node of an output data latch.

An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.

Various implementations described herein are related to a device having memory circuitry having an array of memory cells. The device may include output circuitry coupled to the memory circuitry, and the output circuitry may have a first set of multiplexers that receives column data from the array of memory cells and provides first multiplexed output data. The device may include output interface circuitry coupled to the output circuitry, and the output interface circuitry may have a second set of multiplexers that receives the first multiplexed output data from the output circuitry and selectively provides second multiplexed output data based on a configurable mode of multiplexed operation.

Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.

A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.

Methods and apparatuses for a system error-correction code function are presented. The apparatus includes a memory configured to communicate with a host via at least one data connection and at least one non-data connection. The memory includes a memory array. The memory array includes a first portion and a second portion. The memory is further configured to, in a first mode, store and output data in the first portion and the second portion of the memory array. The first portion is addressable by a first address, and the second portion is addressable by a second address. The memory is further configured to, in a second mode, receive ECC of the data from the host via the at least one non-data connection, store the data in the first portion of the memory array, and store the ECC of the data in the second portion of the memory array based on the first address.

Systems, apparatuses, and methods related to arithmetic operations in memory are described. The arithmetic operations may be performed using bit strings and within a memory array without transferring the bit strings to circuitry external to the memory array. For instance, sensing circuitry that can include a sense amplifier and a compute component can be coupled to a memory array. A controller can be coupled to the sensing circuitry and can be configured to cause one or more bit strings to be transferred from the memory array to the sensing circuitry. In addition to the arithmetic operations, the sensing circuitry can also perform a logical operation using the one or more bit strings.