A semiconductor device of an embodiment includes a seed generator circuit configured to generate a seed from inputted data by using first random number sequence data generated by an XorShift circuit; and a random number generator circuit configured to receive the seed as input to generate second random number sequence data by a second XorShift circuit.

A processor in a data processing system includes a master-shadow physical register file and a renaming unit. The master-shadow physical register file has a master storage coupled to shadow storage. The renaming unit is coupled to the master-shadow physical register file. Based on an occurrence of shadow transfer activation conditions verified by the renaming unit, data in the master storage is transferred from the master storage to the shadow storage for storage. Data is transferred from the shadow storage back to the master storage based on the occurrence of a shadow-to-master transfer event, which includes, for example, a flush of the master storage by the processor.

The present disclosure includes apparatuses and methods for performing operations by a memory device in a self-refresh state. An example includes an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to direct performance of compute operations on data stored in the array when the array is in a self-refresh state.

An example apparatus includes a memory device having first sensing circuitry positioned adjacent an edge of an edge array section and selectably coupled to a row memory cells, the first sensing circuitry including a first sense amplifier selectably coupled via a first sense line to a first memory cell in the row and via a second sense line to the first memory cell. The example apparatus includes second sensing circuitry positioned at an opposite edge of the edge array section and selectably coupled to the row via a third sense line, the second sensing circuitry including a second sense amplifier selectably coupled via the third sense line to a second memory cell in the row. The example apparatus further includes a component positioned outside the edge array section and proximate the first sensing circuitry, the component configured to perform an operation based on data sensed by the first sensing circuitry.

Shift register includes input sub-circuit coupling input terminal to first node responsive to signal of first clock terminal in input stage, control sub-circuit transmitting signal of second clock terminal to intermediate output terminal according to level at first node and controlling potential of third node according to potential of intermediate output terminal and signal of third clock terminal in input, output and reset stages, pull-up sub-circuit coupling second level terminal to final output terminal responsive to potential of intermediate output terminal in output stage, first voltage stabilization sub-circuit stabilizing voltage between final output terminal and third node responsive to signal of next-stage node connection terminal, pull-down transistor having gate electrode coupled to third node, first electrode coupled to first level terminal, and second electrode coupled to final output terminal. First voltage stabilization sub-circuit lowers potential of third node to level lower than signal of first level terminal in reset stage.

A storage device can control the input/output of data at a high frequency. The storage device includes a memory device and a memory controller for controlling the memory device, and providing the memory device with a command. The memory device includes a memory unit, and an interface chip for performing a training operation in response to the command. The interface chip generates a shift signal according to a first data strobe signal provided from the memory controller, and stores, based on the shift signal, training data provided from the memory controller.

An apparatus has a controller and an array of memory cells, including a first section comprising a plurality of rows and a second section comprising a plurality of rows. The controller configured to, in association with wear leveling, transfer data stored in a first row of the first section from the first row to a register, transfer the data from the register to a destination row of the second section while data in a second row of the first section is being sensed.

The present application discloses a data processing method and apparatus. A specific embodiment of the method includes: preprocessing received to-be-processed input data; obtaining a storage address of configuration parameters of the to-be-processed input data based on a result of the preprocessing and a result obtained by linearly fitting an activation function, the configuration parameters being preset according to curve characteristics of the activation function; acquiring the configuration parameters of the to-be-processed input data according to the storage address; and processing the result of the preprocessing of the to-be-processed input data based on the configuration parameters of the to-be-processed input data and a preset circuit structure, to obtain a processing result. This implementation manner implements the processing of the input data to be processed by using the configuration parameter and the preset circuit structure, without the need to use any special circuit for implementing the activation function, thereby simplifying the circuit structure. In addition, this implementation manner can support multiple types of activation functions, thereby improving the flexibility. With such an embodiment, the processing of the input data to be processed can be realized by using the configuration parameters and the preset circuit structure, without the need of using a special circuit to implement the activation function, thereby simplifying the circuit structure, supporting various activation functions, and improving the flexibility.

Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

Systems and methods are disclosed for reducing or eliminating address lines that need to be routed to multiple related embedded memory blocks. In particular, one or more inputs are added to a block RAM such that when one or more of the inputs are asserted, the address input to the Block RAM may be incremented prior to being used to retrieve data contents of the block RAM. Thus, if address <addr> is provided to the block RAM and the address increment signal is asserted, data may be read from location <addr+N> instead of <addr>, where N may be an integer. Block RAMs with such address arithmetic may be used to implement wide First-In-First-Out (FIFO) queues, wide memories, and/or data-burst accessible block RAMs.