A shift register unit circuit includes an input sub-circuit, a pull-up sub-circuit, a pull-down control sub-circuit, a pull-down sub-circuit, and a voltage regulating sub-circuit. The input sub-circuit receives an input signal from a signal input terminal to control a potential of a pull-up node. The pull-up sub-circuit outputs a gate driving signal to an output terminal under control of the potential of the pull-up node and a signal from a first signal terminal. The pull-down control sub-circuit conducts a pull-down node with a first node under control of a signal from the second signal terminal. The pull-down sub-circuit conducts the pull-up node with the first node and the turn-down signal terminal with the output terminal under control of a potential of the pull-down node. The voltage regulating sub-circuit conducts the first node with the turn-down signal terminal under control of a potential of the first node.

In some embodiments, an in-memory-computing SRAM macro based on capacitive-coupling computing (C3) (which is referred to herein as “C3SRAM”) is provided. In some embodiments, a C3SRAM macro can support array-level fully parallel computation, multi-bit outputs, and configurable multi-bit inputs. The macro can include circuits embedded in bitcells and peripherals to perform hardware acceleration for neural networks with binarized weights and activations in some embodiments. In some embodiments, the macro utilizes analog-mixed-signal capacitive-coupling computing to evaluate the main computations of binary neural networks, binary-multiply-and-accumulate operations. Without needing to access the stored weights by individual row, the macro can assert all of its rows simultaneously and form an analog voltage at the read bitline node through capacitive voltage division, in some embodiments. With one analog-to-digital converter (ADC) per column, the macro cab realize fully parallel vector-matrix multiplication in a single cycle in accordance with some embodiments.

Various embodiments include a memory device that is capable of performing command address interface training operations, to determine that certain timing conditions are met, with fewer I/O pins relative to prior approaches. Prior approaches for command address interface training involve loading data via a set of input pins, a clock signal, and a clock enable signal that identifies when the input pins should be sampled. Instead, the disclosed memory device generates a data pattern within the memory device that matches the data pattern continuously being transmitted to the memory device by an external memory controller. The memory device compares the generated data pattern with the received data pattern and transmits the result of the comparison on one or more data output pins. The memory controller receives and analyzes the result of the comparison to determine whether the command address interface training passed or failed.

Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.

Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.

An integrated circuit includes a latch array including a plurality of latches logically configured in rows and columns, a plurality of repair latches operatively coupled to the plurality of latches and latch array built in self-test and repair logic (LABISTRL) coupled to the plurality of latches. In some implementations the LABISTRL configures latches in the array as one or more column serial test shift register, detects one or more defective latches of the plurality of latches based on applied test data, and selects at least one repair latch in response to detection of at least one defective latch.

The present disclosure includes apparatuses and methods for operations using compressed and decompressed data. An example method includes receiving compressed data to a processing in memory (PIM) device and decompressing the compressed data on the PIM device.

An integrated circuit to drive a plurality of fluid actuation devices includes a configuration register, a plurality of interfaces, and control logic. The plurality of interfaces include a mode interface and a data interface. The control logic enables writing to the configuration register in response to a signal on the mode interface transitioning to logic high with a logic high signal on the data interface.

Disclosed is a physical unclonable function generator circuit and testing method. In one embodiment, a physical unclonable function (PUF) generator, includes: a PUF cell array comprising a plurality of bit cells configured in at least one column and at least one row, wherein the plurality of bit cells each provides two voltage transient behaviors on two corresponding bit lines of the at least one column; and at least two load control circuits coupled to the two bit lines of the at least one corresponding column, wherein the at least two load control circuits are each configured to provide at least one discharge pathway to at least one of the two corresponding bit lines, wherein the at least one discharge pathway is configured to change at least one of the two voltage transient behaviors so as to determine stability of each of the plurality of bit cells of the PUF cell array.

Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell array including multiple planes, a peripheral circuit configured to perform an operation on the multiple planes, a control memory configured to store control codes for controlling the peripheral circuit, and a plurality of independent control logic configured to, when a command corresponding to each of the planes is received from a memory controller, control the peripheral circuit with reference to a control code corresponding to the command in response to the command. The control memory includes a common memory configured to be accessible in common by the plurality of independent control logic, and a temporary storage including areas respectively corresponding to the planes.