A memory device comprises a first memory area including a first memory cell array having a plurality of first memory cells each for storing N-bit data, where N is a natural number, and a first peripheral circuit for controlling the first memory cells according to an N-bit data access scheme and disposed below the first memory cell array, a second memory area including a second memory cell array having a plurality of second memory cells each for storing M-bit data, where M is a natural number greater than N, and a second peripheral circuit for controlling the second memory cells according to an M-bit data access scheme and disposed below the second memory cell array, wherein the first memory area and the second memory area are included in a single semiconductor chip and share an input and output interface, and a controller configured to generate calculation data by applying a weight stored in the first memory area to sensing data in response to receiving the sensing data obtained by an external sensor, and store the calculation data in one of the first memory area or the second memory area according to the weight, wherein the plurality of first memory cells and the plurality of second memory cells are included in a first chip having a first metal pad, the first peripheral circuit and the second peripheral circuit are included in a second chip having a second metal pad, and the first chip and the second chip are vertically connected to each other by the first metal pad and the second metal pad.

A memory system includes a memory device including a plurality of non-volatile memories and an interface circuit connected to each of the plurality of non-volatile memories, and a memory controller connected to the interface circuit and configured to transmit/receive data according to a first clock, wherein the interface circuit is configured to divide the first clock into a second clock, according to the number of the plurality of non-volatile memories, and transmit/receive data to/from each of the plurality of non-volatile memories, according to the second clock.

A memory having a delayed write-back to the array of data corresponding to a previously opened page allows delays associated with write-back operations to be avoided. After an initial activation opens a first page and the read/write operations for that page are complete, write-back of the open page to the array of memory cells is delayed until after completion of a subsequent activate operation that opens a new page. Techniques to force a write-back in the absence of another activate operation are also disclosed.

A memory and a method for operating the memory are presented. The memory includes a memory cell, a sense amplifier configured to sense read data from the memory cell, a write driver configured to provide write data to the memory cell, a first circuit configured to enable the sense amplifier during a time period, and a second circuit configured to enable the write driver during at least a portion of the time period. The method includes enabling a sense amplifier to sense read data from a memory cell during a time period and enabling a write driver to provide write data to the memory cell during at least a portion of the time period. Another memory and method for operating the memory are presented. The memory and method further include an address input circuit configured to receive a write address while the sense amplifier is enabled.

A memory system and memory controller for interleaving volatile and non-volatile memory accesses are described. In the memory system, the memory controller is coupled to the volatile and non-volatile memories using a shared address bus. Activate latencies for the volatile and non-volatile memories are different, and registers are included on the memory controller for storing latency values. Additional registers on the memory controller store precharge latencies for the memories as well as page size for the non-volatile memory. A memory access sequencer on the memory controller asserts appropriate chip select signals to the memories to initiate operations therein.

A data storage device includes a memory, a controller, and a communication bus coupled to the memory and to the controller. The controller is configured to send a read-write command and write data to the memory via the communication bus. The read-write command indicates an address of requested data to be read from the memory. The controller is further configured to receive the requested data read from the memory. Communicating the requested data over the communication bus overlaps the write data being stored into the memory.

A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.

The semiconductor memory device selectively switches at least two banks based on an input parallel address for writing or reading data, and includes a control unit, which controlled according to a following method: in a first data access, the semiconductor memory device is accessed according to the input parallel address; and then in a second data access and after, the semiconductor memory device is accessed according to a serial address different to the parallel address. Moreover, the semiconductor memory device is constructed by respectively connecting memory cells to intersections of word lines and bit lines, and the serial address contains: a 1.sup.st serial address for selecting one word line in the word lines, and a 2.sup.nd serial address for selecting one bit line in the bit lines.

According to one embodiment, a semiconductor storage device includes: a first bank that includes a first memory cell group and writes data into the first memory cell group upon receipt of a first command; a second bank that includes a second memory cell group and writes data into the second memory cell group upon receipt of the first command; and a delay controller that issues the first command for the first bank upon receipt of a second command, and issues the first command for the second bank after an interval of at least a first period.

Subject matter disclosed herein relates to methods and apparatus, such as memory devices and systems including such memory devices. In one apparatus example, a plurality of block configurations may be employed. Block configurations may include an arrangement of similarly doped semiconductor switches. Block configurations may select a respective tile of a memory array, a particular memory cell of the respective tile, and select a memory operation to apply to the particular memory cell. Immediately adjacent block configurations within a particular slice of the memory array may be substantially mirrored and immediately adjacent block configurations in separate immediately adjacent slices of the memory array may be substantially similar. Similarly doped diffusion regions for similarly doped semiconductor switches in substantially mirrored block configurations may be arranged to electrically share a common potential signal value level. Other apparatus and methods are also disclosed.