Memory devices having electro-optical substrates are described herein. In one embodiment, a memory device includes a plurality of memories carried by an electro-optical substrate. The electro-optical substrate can include a circuit board and an optical routing layer on the circuit board. The memories can be (a) electrically coupled to the circuit board and (b) optically coupled to the optical routing layer. In some embodiments, the optical routing layer is a polymer waveguide.

A semiconductor device includes a command synthesis circuit synchronized with a first division clock signal to shift a command based on an offset signal and synchronized with a second division clock signal to generate a command synthesis signal from the shifted command. The semiconductor device also includes a strobe control signal synthesis circuit synchronized with the second division clock signal to generate a strobe synthesis signal from a strobe control signal. The semiconductor device further includes a drive control circuit generating a drive control signal from any one of the command synthesis signal and a drive signal based on the strobe synthesis signal.

A semiconductor device includes a command synthesis circuit synchronized with a first division clock signal to shift a command based on an offset signal and synchronized with a second division clock signal to generate a command synthesis signal from the shifted command. The semiconductor device also includes a strobe control signal synthesis circuit synchronized with the second division clock signal to generate a strobe synthesis signal from a strobe control signal. The semiconductor device further includes a drive control circuit generating a drive control signal from any one of the command synthesis signal and a drive signal based on the strobe synthesis signal.

A disclosed system may include (1) a memory package having a physical memory and optical circuitry, (2) a processor package, separate and distinct from the memory package, having at least one physical processor and additional optical circuitry, and (3) an optical medium communicatively coupling the optical circuitry of the memory package with the additional optical circuitry of the processor package. Various other systems, apparatuses, and methods are also disclosed.

A method is described. The method includes configuring first register space to establish ODT values of a data strobe signal trace of a DDR data bus. The method also includes configuring second register space to establish ODT values of a data signal trace of the DDR data bus. The ODT values for the data strobe signal trace are different than the ODT values for the data signal trace. The ODT values for the data strobe signal do not change when consecutive write operations of the DDR bus write to different ranks of a same DIMM.

A remote memory system includes a substrate of a multi-chip package, an integrated circuit chip connected to the substrate, and an electro-optical chip connected to the substrate. The integrated circuit chip includes a high-bandwidth memory interface. An electrical interface of the electro-optical chip is electrically connected to the high-bandwidth memory interface. A photonic interface of the electro-optical chip is configured to optically connect with an optical link. The electro-optical chip includes at least one optical macro that converts outgoing electrical data signals received through the electrical interface from the high-bandwidth interface into outgoing optical data signals. The optical macro transmits the outgoing optical data signals through the photonic interface to the optical link. The optical macro also converts incoming optical data signals received through the photonic interface into incoming electrical data signals. The optical macro transmits the incoming electrical data signals through the electrical interface to the high-bandwidth memory interface.

Described herein are embodiments of a photonic computing system comprising one or more processors in communication with disaggregated memory through one or more optical channels. The disaggregated memory comprises multiple memory units placed on a photonic substrate that includes a photonic network that can be programmed to configure which of the memory units can be accessed by each of the processor(s).

A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.

A remote memory system includes a substrate of a multi-chip package, an integrated circuit chip connected to the substrate, and an electro-optical chip connected to the substrate. The integrated circuit chip includes a high-bandwidth memory interface. An electrical interface of the electro-optical chip is electrically connected to the high-bandwidth memory interface. A photonic interface of the electro-optical chip is configured to optically connect with an optical link. The electro-optical chip includes at least one optical macro that converts outgoing electrical data signals received through the electrical interface from the high-bandwidth interface into outgoing optical data signals. The optical macro transmits the outgoing optical data signals through the photonic interface to the optical link. The optical macro also converts incoming optical data signals received through the photonic interface into incoming electrical data signals. The optical macro transmits the incoming electrical data signals through the electrical interface to the high-bandwidth memory interface.

A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.