A memory is provided that is configured to practice two different modes of read operation, such as both a normal read operation and a burst-mode read operation. In one example, the memory is a pseudo-dual-port memory. The memory may include an address comparator to perform a time-division multiplexing to first compare a read address to a stored address and then to compare a write address to the stored address.

The systems and methods described herein involve a device that may receive a plurality of commands and generate a common command indicative of matching data signals between each of the plurality of commands. The device may include a first latch that receives a shifted flag and outputs a shifted command in response to a first enable signal. The device may include shifters, where a first shifter may receive the common command, and a last shifter may couple to the first latch. The last shifter may receive a shifter common command and may generate the first enable signal using the shifted common command.

A memory includes: first to N.sup.th register circuits each suitable for receiving and storing a failure address transferred from a memory controller when a corresponding selection signal of first to N.sup.th selection signals is activated, where N is an integer equal to or greater than 2; first to N.sup.th resource latch circuits suitable for storing first to N.sup.th resource signals indicating availability of the first to N.sup.th register circuits, respectively; and a priority selection circuit suitable for activating, when two or more of the first to N.sup.th resource signals are activated, one of selection signals respectively corresponding to the activated resource signals among the first to N.sup.th selection signals.

A processing device is provided which includes a processor and a data storage structure. The data storage structure comprises a data storage array comprising a plurality of lines. Each line comprises at least one A latch configured to store a data bit and a clock gater. The data storage structure also comprises a write data B latch configured to store, over different clock cycles, a different data bit, each to be written to the at least one A latch of one of the plurality of lines. The data storage structure also comprises a plurality of write index B latches shared by the clock gaters of the lines. The write index B latches are configured to store, over the different clock cycles, combinations of index bits having values which index one of the lines to which a corresponding data bit is to be stored.

Methods, apparatus, systems and articles of manufacture are disclosed for allocation in a victim cache system. An example apparatus includes a first cache storage, a second cache storage, a cache controller coupled to the first cache storage and the second cache storage and operable to receive a memory operation that specifies an address, determine, based on the address, that the memory operation evicts a first set of data from the first cache storage, determine that the first set of data is unmodified relative to an extended memory, and cause the first set of data to be stored in the second cache storage.

A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

A serializer includes data input circuits configured to receive N-number of pieces of data in parallel, where N is an even number, data connection circuits configured to receive internal clock signals having different phases in different arrangements, and data output circuits configured to output the N-number of pieces of data in sequence in a single cycle of each of the internal clock signals, wherein the data connection circuits operate the data output circuits such that the data output circuits, in response to the internal clock signals, output corresponding data of the N-number of pieces of data in an enable period in the single cycle and have a high impedance state in a disable period in the single cycle.

An encoder includes an encoding unit configured to receive 2n-bit read data and to generate 2m-bit read data, and an output driver configured to input m-bit first read data of the 2m-bit read data, to transmit voltage and/or current a first number of times corresponding to a number of first bits indicating a first state included in the m-bit first read data or to transmit current corresponding to the number of first bits during an activation period of a clock signal, and to transmit the voltage and/or the current a second number of times corresponding to a number of second bits indicating the first state included in m-bit second read data of the 2m-bit read data or to transmit current corresponding to the number of second bits during a deactivation period of the clock signal, wherein n is at least 2 and m is at least 3.

A semiconductor memory device includes a latch defined on a circuit chip; and a bit line select transistor defined in a first memory chip stacked in the circuit chip and a second memory chip stacked on the first memory chip. The bit line select transistors exchange data with the latch.

A serializer includes data input circuits configured to receive N-number of pieces of data in parallel, where N is an even number, data connection circuits configured to receive internal clock signals having different phases in different arrangements, and data output circuits configured to output the N-number of pieces of data in sequence in a single cycle of each of the internal clock signals, wherein the data connection circuits operate the data output circuits such that the data output circuits, in response to the internal clock signals, output corresponding data of the N-number of pieces of data in an enable period in the single cycle and have a high impedance state in a disable period in the single cycle.