A signal sampling circuit includes: a signal input circuit, configured to determine a to-be-processed command signal and a to-be-processed chip select signal; a clock receiving circuit, configured to receive an initial clock signal and perform frequency division processing on the initial clock signal to obtain a first clock signal; a sampling and logic circuit, configured to perform two-stage sampling processing and logic operation processing on the to-be-processed chip select signal according to the first clock signal to obtain a chip select clock signal, where the chip select clock signal includes two pulses, and the width of each pulse is a preset clock cycle; and a decoding circuit, configured to perform decoding processing and sampling processing on the to-be-processed command signal according to the to-be-processed chip select signal and the chip select clock signal to obtain a target command signal.

A memory device includes an external information input circuit configured to generate a burst mode signal and a write command pulse for a write operation, by receiving external information for the write operation; and a write operation control circuit configured to generate a write control pulse for storing internal data in a cell array, from the write command pulse when a first burst mode is performed on the basis of the burst mode signal, and to control whether to generate the write control pulse from the write command pulse when a second burst mode is performed on the basis of the burst mode signal.

A microelectronic device comprises a microelectronic device structure comprising a section comprising page buffers, and an additional section horizontally neighboring the section and comprising page buffer drivers and a timing delay chain coupled to the page buffer drivers. Each of the page buffer drivers is coupled to different group of the page buffers than each other of the page buffer drivers. The timing delay chain comprises timing delay circuits coupled in series with one another. Each of the timing delay circuits is configured to adjustably delay propagation of a control signal therethrough. Memory devices, methods of operating memory devices, and electronic systems are also described.

A signal sampling circuit and a semiconductor memory device are provided. The signal sampling circuit includes a signal input circuit, configured to determine a to-be-processed command signal and a to-be-processed chip select signal; a mode selection circuit, configured to determine a target mode clock signal and a target mode chip select signal according to the mode selection signal; a first clock processing circuit, configured to perform sampling and logic operation on the to-be-processed chip select signal and the target mode chip select signal according to the target mode clock signal, to obtain a first chip select clock signal; a second clock processing circuit, configured to perform sampling and logic operation on the to-be-processed chip select signal and the target mode chip select signal according to the target mode clock signal, to obtain a second chip select clock signal; and a command decoding circuit, configured to determine a target command signal.

A data processing system includes a memory configured to receive memory access requests. Each memory access request having a corresponding access address and having a corresponding parity bit for an address value of the corresponding access address. The corresponding access address is received over a plurality of address lines and the parity bit is received over a parity line. The memory includes a memory array having a plurality of memory cells arranged in rows, each row having a corresponding word line of a plurality of word lines, and a row decoder coupled to the plurality of address lines, the parity line, and the plurality of word lines. The row decoder is configured to selectively activate a selected word line of the plurality of word lines based on the corresponding access address and the corresponding parity bit of a received memory access request. The concept can also be used with parity bits on columns of the memory cells and a column decoder that selects bit lines associated with column address lines.

Provided is data receiving circuit, data receiving system and memory device. The data receiving circuit includes: first amplification circuit, configured to receive data signal, first reference signal and second reference signal, perform first comparison on the data signal and the first reference signal in response to sampling clock signal and output first signal pair, and perform second comparison on the data signal and the second reference signal and output second signal pair; second amplification circuit, configured to receive enable signal and feedback signal, selectively receive the first signal pair or the second signal pair as input signal pair based on the feedback signal during period in which the enable signal is at first level, receive the first signal pair during period in which the enable signal is at second level, amplify voltage difference of the first signal pair, and output first output signal and second output signal.

A device includes a memory cell array configured to store data; and a signal propagation circuit configured to propagate a signal between the memory cell array and a host. The signal propagation circuit includes a first inverted signal output circuit, a second inverted signal output circuit including an input terminal connected to i) an output terminal of the first inverted signal output circuit and ii) an output terminal of the second inverted signal output circuit, a third inverted signal output circuit including an input terminal connected to i) the output terminal of the first inverted signal output circuit and ii) the output terminal of the second inverted signal output circuit, and a fourth inverted signal output circuit including an input terminal connected to i) an output terminal of the third inverted signal output circuit and ii) an output terminal of the fourth inverted signal output circuit.

The present invention includes apparatus and a method for reading one or more data states from an integrated circuitry memory cell, including the steps of connecting the memory cell to a bit line which is connected to an amplifier having an offset control which introduces an offset during the sensing portion of a read cycle to identify a data state stored in the memory cell.

An aspect of the disclosure relates to a latch array, including: a first set of master latches including a first set of clock inputs configured to receive a master clock, a first set of data inputs configured to receive a first set of data, and a first set of data outputs coupled to a set of bitlines, respectively; a second set of master latches including a second set of clock inputs configured to receive the master clock, a first set of write-bit inputs configured to receive a set of write-bit signals, and a set of write-bit outputs coupled to a set of write-bit lines, respectively; and an array of slave latches, wherein the slave latches in columns of the array include a second set of data inputs coupled to the set of bitlines, and a second set of write-bit inputs coupled to the set of write-bit lines, respectively.

A ternary content addressable memory (TCAM) device comprising an input interface having a first input for receiving first data and a second input for receiving second data; and a memory configured to write the first data into an address selected row of the memory at the same time that a comparison is performed between the second data and at least one other row of the memory different from the address selected row. More particularly, the input interface may further have a third input for receiving a search enable signal and a fourth input for receiving a write enable signal, wherein the memory is configured to write the first data and perform the comparison in response to assertion of the search enable signal at the same time as assertion of the write enable signal. An associated method is also provided.