A data control circuit includes a first latch circuit, a self-block circuit, a second latch circuit, a third latch circuit, a first data timing-labeled signal generating circuit, and a second data timing-labeled signal generating circuit. The first latch circuit is arranged to receive a data window signal. The self-block circuit is coupled to the first latch circuit, and is arranged to generate a protection signal. The second latch circuit is coupled to the self-block circuit, and is arranged to output a first data timing-labeled signal. The third latch circuit is coupled to the second latch circuit, and is arranged to generate a second data timing-labeled signal. The first data timing-labeled signal generating circuit is arranged to generate a third data timing-labeled signal. The second data timing-labeled signal generating circuit is arranged to generate a fourth data timing-labeled signal.

The present disclosure provides page buffer circuits of 3D NAND devices. In some embodiments, the page buffer circuit comprises a first bit line segment sensing branch connected to a first bit line segment of a bit line, and a second bit line segment sensing branch connected to a second bit line segment of the bit line. The first bit line segment sensing branch and the second bit line segment sensing branch are parallel connected to a sensing node of the page buffer circuit. In some embodiments, the first bit line segment sensing branch comprises a first sense latch and a first bit line pre-charge path, and the second bit line segment sensing branch comprises a second sense latch and a second bit line pre-charge path.

A read/write switching circuit and a memory are provided. The read/write switching circuit includes: a first data line (Ldat) connected to a bit line (BL) through a column select module, a first complementary data line (Ldat #) connected to a complementary bit line through the column select module, a second data line (Gdat) and a second complementary data line (Gdat #), and further includes: a read/write switching module (101) configured to transmit data between the first data line and the second data line and transmit data between the first complementary data line (Ldat #) and the second complementary data line (Gdat #) during read and write operations in response to read and write control signals; and an amplification module (102) connected between the first data line (Ldat) and the first complementary data line (Ldat #) and configured to amplify data of the first data line (Ldat) and data of the first complementary data line (Ldat #).

A memory module supports multiple memory channel modes, each including a double-date-rate (DDR) data channel supported by an independent command-and-address (CA) channel. In a two-channel mode, the memory module supports two DDR data channels using two respective DDR CA channels. Each CA channel includes a corresponding set of CA links. In a four-channel mode, the memory module supports two pairs of DDR data channels, each pair supported by a pair of independent CA channels. Memory commands issued in the four-channel mode are time interleaved to share one of the sets of CA links.

A processing-in-memory (PIM) device includes a first group of storage regions, a second group of storage regions, and a plurality of multiplication/accumulation (MAC) operators. The MAC operators are configured to communicate with the first and second groups of storage regions through a global data input/output (GIO) line. A first storage region corresponding to a storage region of the first group of storage regions, a second storage region corresponding to a storage region of the second group of storage regions, and a first MAC operator corresponding to a MAC operator of the plurality of MAC operators constitute a MAC unit. The first MAC operator is configured to receive first data and second data from the first and second storage regions, respectively, through the GIO line to perform a MAC arithmetic operation of the first and second data and to output a result of the MAC arithmetic operation.

A data storage includes a memory array including a plurality of memory cells, and peripheral circuitry disposed underneath the memory array. The peripheral circuitry includes an M-tier sense amplifier (SA) circuit including X stacks of SA latches, wherein each SA latch is respectively coupled to a bit line of a memory cell of the plurality of memory cells; and an N-tier memory cache data (XDL) circuit including Y stacks of XDL latches, wherein M is less than N, and X is greater than Y. The peripheral circuitry further includes data path circuitry coupling (i) each SA latch of the X stacks of SA latches to (ii) a respective XDL latch of the Y stacks of XDL latches.

The present disclosure includes apparatuses and methods related to data transfer in memory. An example apparatus can include a first number of memory devices coupled to a host via a first number of ports and a second number of memory devices coupled to the first number of memory device via a second number of ports, wherein a first number of commands are executed to transfer data between the first number of memory devices and the host via the first number of ports and a second number of commands are executed to transfer data between the first number of memory device and the second number of memory device via the second number of ports.

A flip-flop circuit includes a clock generator configured to generate first and second clock signals having different phases relative to each other, and a master-slave latch circuit including master and slave latches. The master latch includes a scan path configured to output a scan path signal in response to a scan enable signal and a scan input signal, and a data path configured to output a first latch signal in response to a data signal and the scan path signal. A feedback path is provided, which includes a tri-state inverter responsive to the first and second clock signals. The tri-state inverter has an input terminal connected to an output terminal of the data path and an output terminal connected to a node of the scan path.

An apparatus includes one or more control circuits configured to connect to a plurality of non-volatile memory cells arranged along word lines. The one or more control circuits are configured to receive a plurality of encoded portions of data to be programmed in non-volatile memory cells of a target word line, each encoded portion of data encoded according to an Error Correction Code (ECC) encoding scheme, and arrange the plurality of encoded portions of data in a plurality of rows of data latches corresponding to a plurality of logical pages such that each encoded portion of data is distributed across two or more rows of data latches. The one or more control circuits are also configured to program the distributed encoded portions of data from the plurality of rows of data latches into non-volatile memory cells along a target word line.

Aspects of the disclosure provide a semiconductor device. For example, the semiconductor device can include a first deserializer, a second deserializer, and a write data converter coupled to the first deserializer and the second deserializer. The first deserializer can be configured to convert serial data to parallel data based on a set of write clock signals, thus the parallel data has a first timing alignment with regard to the set of write clock signals. The second deserializer can be configured to generate a mask pattern based on the set of write clock signals, thus the mask pattern has a second timing alignment with regard to the set of write clock signals. The write data converter can be configured to generate valid data based on the parallel data and the mask pattern.