A semiconductor chip capable of improving signal quality includes a host device, a first memory device which is spaced part from the host device and connected to the host device, a repeater module which is connected to the host device and the first memory device, and a second memory device which is spaced apart from the host device and connected to the repeater module. The first memory device receives a data signal from the host device and generates a recovery clock signal, using the data signal. The repeater module receives the recovery clock signal from the first memory device, receives a first input signal from the host device, and samples the first input signal on the basis of the recovery clock signal to generate a sampling signal. The second memory device receives the sampling signal.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

A memory device includes a memory array of memory cells, wordlines and bitlines connected to the memory cells, a first read multiplexor and a second read multiplexor connected to the bitlines, a first sense amplifier connected to the first read multiplexor, a second sense amplifier connected to the second read multiplexor, a first data path connected to the first sense amplifier, and a second data path connected to the second sense amplifier. Each of the memory cells is connected to only one pair of the bitlines and only one of the wordlines. The first read multiplexor is adapted to connect the first sense amplifier to the bitlines during a first portion of a clock cycle and the second read multiplexor is adapted to connect the second sense amplifier to the bitlines during a second portion of a clock cycle that is different from the first portion of the clock cycle.

A data control circuit includes a first latch circuit, a self-block circuit, a second latch circuit, a third latch circuit, a first data timing-labeled signal generating circuit, and a second data timing-labeled signal generating circuit. The first latch circuit is arranged to receive a data window signal. The self-block circuit is coupled to the first latch circuit, and is arranged to generate a protection signal. The second latch circuit is coupled to the self-block circuit, and is arranged to output a first data timing-labeled signal. The third latch circuit is coupled to the second latch circuit, and is arranged to generate a second data timing-labeled signal. The first data timing-labeled signal generating circuit is arranged to generate a third data timing-labeled signal. The second data timing-labeled signal generating circuit is arranged to generate a fourth data timing-labeled signal.

An electronic device includes a dock dividing circuit configured to generate sampling clocks, alignment clocks and output clocks by dividing a frequency of a write clock; and a data alignment circuit configured to, in a first operation mode, receive input data having any one level among a first level to a fourth level and generate alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks, and to, in a second operation mode, receive the input data having any one level of the first level and the fourth level and generate the alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks.

A semiconductor integrated circuit has a reception circuit configured to receive a strobe signal of which a logic is intermittently switched in synchronization with a data signal, an output circuit configured to extract a low frequency component including at least a DC component of the strobe signal received by the reception circuit and to output a first signal, and a comparison circuit configured to compare a signal level of the first signal with a threshold level. The reception circuit is configured to change a boost amount of a high frequency component different from the low frequency component of the strobe signal based on a comparison result obtained by the comparison circuit.

Technologies for converting serial data stream to a parallel data and strobe scheme with data strobe preamble information in the serial data stream are described. A device includes an interface circuit that receives a serial data stream and converts the serial data stream to parallel data and a data strobe (DQS) signal associated with the parallel data using N-bit header fields inserted into the serial data stream. The N-bit header fields specify DQS preamble information for the parallel data.

This document describes apparatuses and techniques for multi-rail power transition. In various aspects, a power rail controller transitions a memory circuit (e.g., of a memory die) from a first power rail to a second power rail. The power rail controller then changes a voltage of the first power rail from a first voltage to a second voltage. The power rail controller may also adjust termination impedance or a clock frequency of the memory circuit before transitioning the memory circuit to the second power rail. The power rail controller then transitions the memory circuit from the second power rail to the first power rail to enable operation of the memory circuit at the second voltage. By so doing, the power rail controller may improve the reliability of memory operations when transitioning operation of the memory circuit from the first voltage to the second voltage.

Methods, apparatuses, and systems related to an apparatus are described. The apparatus may include (1) a read state circuit configured to control the schedule/timing associated with parallel pipelines, and (2) a timing control circuit configured to coordinate output of data from the parallel pipelines.

A memory device including a memory array operatively coupled to an array data bus and a deserializer circuit operatively coupled with the array data bus. The deserializer circuit includes a first ring counter including a first set of flip-flops to sequentially output a set of rising edge clock signals based on a reference clock input and a second ring counter portion including a second set of flip-flop circuits to sequentially output a set of falling edge clock signals based on the reference clock input. A rising data circuit portion of the deserializer circuit includes a set of flip-flops that each receive a rising data portion from a respective latch circuit in response to a rising edge clock signal. A falling data circuit portion of the deserializer circuit includes a set of flip-flops that each receive a falling data portion from a respective latch circuit in response to a falling edge clock signal. The third set of flip-flops outputs the set of rising data portions and the fourth set of flip-flop circuits outputs the set of falling data portions to generate a synchronized data stream to output to the array data bus in response to a common clock signal.