A semiconductor device includes an error correction code circuit and a register circuit. The error correction code circuit is configured to generate first data according to second data. The register circuit is configured to generate reset information according to a difference between the first data and the second data, for adjusting a memory cell associated with the second data. A method is also disclosed herein.

Disclosed herein are related to a memory device including a set of memory cells and a memory controller. In one aspect, each of the set of memory cells includes a select transistor and a storage element connected in series between a corresponding bit line and a corresponding source line. In one aspect, the memory controller is configured to apply a first write voltage to a bit line coupled to a selected memory cell, apply a second write voltage to a word line coupled to a gate electrode of a select transistor of the selected memory cell during a first time period, and apply a third write voltage to a source line coupled to the selected memory cell. The second write voltage may be between the first write voltage and the third write voltage.

A memory device of a memory module includes a CA buffer that receives a command/address (CA) signal through a bus shared by a memory device different from the memory device of the memory module, and a calibration logic circuit that identifies location information of the memory device on the bus. The memory device recognizes its own location on a bus in a memory module to perform self-calibration, and thus, the memory device appropriately operates even under an operation condition varying depending on a location in the memory module.

A memory is provided that includes a write multiplexer, which multiplexes among a plurality of bit line columns. The multiplexer includes a positive boost circuit that applies a positive boost to a voltage at the gates of transistors to strengthen an on state of those transistors. The positive boosting may be in addition to, or instead of, negative boosting at a write driver circuit.

A memory device includes: a memory bank including a plurality of memory cells; and a memory interface circuit configured to store data in the plurality of memory cells based on a command/address signal and a data signal, wherein the memory interface circuit includes: first, second, third and fourth pads configured to receive first, second, third and fourth clock signals, respectively; a first buffer circuit configured to sample the command/address signal in response to an activation time of the first and third clock signals which have opposite phases from each other; and a second buffer circuit configured to sample the data signal in response to the activation time of the first clock signal, an activation time of the second clock signal, the activation time of the third clock signal and an activation time of the fourth clock signal.

Aspects of the present disclosure are directed to devices and methods for performing MAC operations using a memory array as a compute-in-memory (CIM) device that can enable higher computational throughput, higher performance and lower energy consumption compared to computation using a processor outside of a memory array. In some embodiments, an activation architecture is provided using a bit cell array arranged in rows and columns to store charges that represent a weight value in a weight matrix. A read word line (RWL) may be repurposed to provide the input activation value to bit cells within a row of bit cells, while a read-bit line (RBL) is configured to receive multiplication products from bit cells arranged in a column. Some embodiments provide multiple sub-arrays or tiles of bit cell arrays.

A semiconductor device comprises: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the ground level and a second level lower than the first level, a transmitter configured to output received the first signal through the first or second path as the second signal to the third path, and initialize in response to an enable signal, and a receiver configured to output received the second signal through the third path as the first signal through the first or second path, determine level of the second signal through a reference level that is regulated according to a fed-back level of an output terminal thereof, and initialize in response to the enable signal.

A request to perform a write operation at a memory device is received. Current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments is retrieved. The write operation is performed on the particular memory segment. In a firmware record in a memory sub-system controller, information is stored indicative of a last written memory page associated with the particular memory segment on which the write operation is performed. The firmware record is managed in view of the information indicative of the last written memory page associated with the performed write operation. Each entry of the firmware record comprises one or more identifying indicia associated with a respective memory segment, at least one of the identifying indicia being a wordline start voltage (WLSV) associated with the respective memory segment.

A memory circuit includes a reference node configured to carry a reference voltage having a reference voltage level, a power supply node configured to carry a power supply voltage having a power supply voltage level, a bit line coupled with a plurality of memory cells, a write circuit configured to charge the bit line by driving a voltage level on the bit line toward the power supply voltage level with a first current, and a switching circuit coupled between the power supply node and the bit line. The switching circuit is configured to receive the voltage level on the bit line, and responsive to a difference between the voltage level received on the bit line and the power supply voltage level being less than or equal to a threshold value, drive the voltage level on the bit line toward the power supply voltage level with a second current.

Numerous embodiments are disclosed for splitting a physical array into multiple arrays for separate vector-by-matrix multiplication (VMM) operations. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns; and a plurality of sets of output lines, where each column contains a set of output lines; wherein each row is coupled to only one output line in the set of output lines for each column.