A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.

The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit ‘1’ corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit ‘0’ corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit ‘1’ encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit ‘0’ encoded into the RKKY-based magnetic memory cell.

A method for manufacturing a semiconductor structure includes: providing a substrate; forming a first shielding layer on the substrate; forming a first electrode penetrating the first shielding layer; forming a storage structure on the first electrode; forming a second shielding layer on the top surface and sidewalls of the storage structure, wherein the first shielding layer and the second shielding layer combine into one integrated shielding layer; and forming a second electrode which penetrates the shielding layer and electrically connects to the storage structure.

A magnetoresistance effect element includes a wiring that extends in a first direction, a laminate that includes a first ferromagnetic layer connected to the wiring, a first conductive part and a second conductive part that sandwich the first ferromagnetic layer therebetween in a plan view in a lamination direction, and a resistor that has a geometrical center overlapping a geometrical center of the first conductive part or farther away from the laminate than the geometrical center of the first conductive part in the first direction when viewed in a plan view in the lamination direction.

A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar.

A memory device is provided that includes at least one MTJ pillar which can have a ternary program state as compared to a binary program state in a conventional device. The MTJ pillar contains a lower MTJ structure that includes at least a first magnetic reference material, a first tunnel barrier and a first magnetic free layer material, and an upper MTJ structure that includes at least a second magnetic reference material, a second tunnel barrier and a second magnetic free layer material; the upper MTJ structure is stacked atop the lower MTJ structure. The first and second magnetic free layer materials have different designs and/or compositions resulting in different switching voltages.