A quantum hybridization negative differential resistance device having negative differential resistance (NDR) under a low voltage condition using a nanowire based on an organic-inorganic hybrid halide perovskite, and a circuit thereof are provided. The quantum hybridization negative differential resistance device includes a channel formed of an organic-inorganic hybrid halide perovskite crystal and electrodes formed of its inorganic framework and is connected to opposite ends of the channel.

A protein memory cell and a protein memory system are provided. The protein memory cell includes: first and second electrodes disposed to be spaced apart from each other on a micro channel; a gap region defined between the first and second electrodes on the micro channel; an outer region defined as an opposite side to the gap region based on the first or second electrode on the micro channel; and a photosensitive protein changing conductivity between the first and second electrodes while moving between the gap region and the outer region depending on structural conversion of a chromophore.

An optical synapse comprises a memristive device for non-volatile storage of a synaptic weight dependent on resistance of the device, and an optical modulator for volatile modulation of optical transmission in a waveguide. The memristive device and optical modulator are connected in control circuitry which is operable, in a write mode, to supply a programming signal to the memristive device to program the synaptic weight and, in a read mode, to supply an electrical signal, dependent on the synaptic weight, to the optical modulator whereby the optical transmission is controlled in a volatile manner in dependence on programmed synaptic weight.

The disclosed technology relates to a molecular synthesis device. In one aspect, the molecular synthesis device comprises a synthesis array having an array of synthesis locations and an electrode arranged at each synthesis locations. The molecular synthesis device further comprises a non-volatile memory having an array of bit cells and a set of wordlines and a set of bitlines. Each bit cell comprises a non-volatile memory transistor having a control gate connected to a wordline, a first source/drain terminal, and a second source/drain terminal connected to a bitline. The electrode at each synthesis locations of the synthesis array is connected to the first source/drain terminal of a corresponding bit cell of the non-volatile memory.

A resistive memory device includes a first bit line group including a first edge bit line, a second bit line group including a second edge bit line, and a first boundary transistor configured to apply a non-selection voltage to the second edge bit line according to a selection of the first edge bit line. The first edge bit line of the first bit line group is disposed closest to the second bit line group, and the second edge bit line of the second bit line group is disposed closest to the first bit line group.

A data storage system and method are provided, as well as systems and methods for fabrication, and writing and reading of data therein. The data storage system includes at least one population of molecular sequences including chains of basic molecular building-blocks, and defining at least one respective data-block encoding data in the data storage system. The data of the data-block is encoded in a sequence S=(π.sup.1, π.sup.2, . . . , π.sup.k . . . , π.sup.K-1, π.sup.K) of encoded letters {π.sup.k} associated with an alphabet Σ≡{σ.sub.m}|.sub.m=1 to M, which are encoded according to the types of basic molecular building-blocks appearing at k respective location along storage segments of the molecular sequences of the population. The molecular sequences include a number Z of different types of basic molecular building-blocks {E.sup.n}|.sub.n=1 to Z, while the alphabet Σ has a size M strictly greater than the number Z of types of building-blocks. Each alphabet letter σ.sub.m is associated with a vector {P.sub.m.sup.n}|.sub.n=1 to Z indicative of occurrences of basic molecular building-block E.sup.n of type n in the alphabet letter σ.sub.m. Accordingly each encoded letter π.sup.k at location k in the storage segments of molecular sequences of the data-block/population, is mapped to a corresponding alphabet letter σ.sub.m by determining a match between the occurrence of basic molecular building-blocks of different types at that locations k of the molecular sequences of the population, with the vector {P.sub.m.sup.n}|.sub.n=1 to Z associated with the alphabet letter σ.sub.m. In some implementations the component P.sub.m.sup.n of the vector {P.sub.m.sup.n}.sub.m|n=1 to Z associated with alphabet letter σ.sub.m is indicative of a probability that a basic molecular building-block E.sup.n of type n, 1≤n≤Z, appears at the location k of the storage segment of a molecular strand of the at least one population in case the letter π.sup.k encoded at that location k corresponds to the alphabet letter σ.sub.m.

A system and method comprising the steps of: depositing a first electrode metal on an insulating substrate or layer; creating a trench component, in which said trench component comprises a section of said first electrode metal or both first electrode metal and insulating substrate or layer with a depth based on at least one of, a molecular device element, a trenched bottom electrode, and a liftoff molecular device (TBELMD) to be produced; insulating said first electrode metal from a predetermined material deposited in said trench component; and depositing a second electrode metal on said predetermined material deposited in said trench component.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

A method of writing data to a DNA strand comprises cutting an address block of a selected address-data block unit of the DNA strand to form first and second DNA strings, and inserting a replacement address-data block that includes a replacement data segment between the first DNA string and the second DNA string to provide a rewritten DNA strand having valid address followed by valid data and an invalid address followed by invalid data.