Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

An apparatus for generating a binary numerical sequence is provided. The apparatus is configured to apply a first write voltage or a second write voltage, different from the first write voltage, as a write voltage to each of two or more switchable elements, and/or to apply a first read voltage or a second read voltage, different from the first read voltage, as a read voltage to each of the two or more switchable elements. Each switchable element of the two or more switchable elements is configured to output, in dependence on the write voltage applied to the switchable element and/or in dependence on the read voltage applied to the switchable element, an output voltage with a first random or pseudo-random voltage value from a first voltage value range or with a second random or pseudo-random voltage value from a second voltage value range.

Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

A system and method of secure communication between computing devices based on physical unclonable functions such as memories having dissolvable conductive paths is provided. The method involves enrolling a client device, the client device having a PUF such as a pristine ReRAM. The PUF is enrolled in a secure environment by reading and storing the resistances of the PUF's addressable memory cells. The cells are categorized into “rugged” and “vulnerable” categories on the basis of their resistance, the vulnerable cells being those more likely to be permanently altered during the generations of PUF responses. The rugged cells are used for the generation of PUF responses for cryptographic key generation, but the vulnerable cells may be inspected to detect unauthorized 3rd party access to the PUF.

A resistive random access memory array includes a plurality of memory cells. Each memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a second electrode separated from the conductive nanosheets by the resistive element. The resistive random access memory array is used to generate physical unclonable function data.

A system may include an array of interconnected memristors. Each memristor may include a first electrode, a second electrode, and a memristor material positioned between the first electrode and the second electrode. The system may further include a controller communicatively coupled to the array of interconnected memristors. The controller may be configured to tune the array of interconnected memristors.

An apparatus, such as a memory (e.g., a NAND memory), can have a controller, a volatile counter coupled to the controller, and a non-volatile memory array coupled to the controller. The controller can be configured to write information, other than a count of the counter, in the array each time the count of the counter has been incremented by a particular number of increments. Counts can be monotonic, non-volatile, and power-loss tolerant.

Methods of operating memory arrays are described. In various embodiments, a method includes determining a pattern to be written to a memory array, the pattern comprising both data bits having sensitive information to be stored and data bits having a state that is unimportant to the sensitive information to be stored, and writing the pattern to the memory array. Other methods of operation are also described.

An ephemeral peripheral system includes an ephemeral memory system and controller circuit for securing user data for a smartphone application. Different secure operating modes are provided for customizing user security requirements across end-to-end communications links, including in exchanges of electronic data between smartphone devices.