Patent classifications
G
PHYSICS
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G11
INFORMATION STORAGE
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G11C
STATIC STORES
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16/00
Erasable programmable read-only memories
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G11C16/02
electrically programmable
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G11C16/04
using variable threshold transistors, e.g. FAMOS
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G11C16/0466
comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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