A memory device includes a memory cell array including a plurality of memory cells on which a programming loop is executed a plurality of times; a voltage generator configured to apply a verifying voltage to the memory cells, for verifying at least one programming state of the memory cells; and a voltage controller configured to control the voltage generator to change a level of the verifying voltage as a program loop count increases, based on temperature information about a temperature inside or outside the memory device.

A memory device includes a memory cell array including a plurality of memory cells on which a programming loop is executed a plurality of times; a voltage generator configured to apply a verifying voltage to the memory cells, for verifying at least one programming state of the memory cells; and a voltage controller configured to control the voltage generator to change a level of the verifying voltage as a program loop count increases, based on temperature information about a temperature inside or outside the memory device.

Provided are a memory device storing setting data and a memory system including the same. The memory device may include a cell array including a plurality of cell blocks, each including a plurality of pages, and a control logic that controls a program and read operation on the cell array, wherein at least one page of the cell array stores information data read (IDR) data including information related to a setting operation of the memory device, at least one other page of the cell array stores replica IDR data including inverted bit values of the IDR data, and the control logic controls a recovery operation for repairing errors in the IDR data by reading the replica IDR data when a read fail of the IDR data occurs.

A memory device includes pages containing memory cells arranged in an array on a substrate. In each memory cell, a voltage applied to a first gate conductor layer, second gate conductor layer, third gate conductor layer, first impurity layer, and second impurity layer is controlled to form a hole group by impact ionization inside a channel semiconductor layer, and a page write operation of holding the hole group and a page erase operation of removing the hole group are performed. The first impurity layer is connected to a source line, the second impurity layer to a bit line, the first gate conductor layer to a first plate line, the second gate conductor layer to a second plate line, and the third gate conductor layer to a word line. A page erase operation is performed without inputting a positive or negative bias pulse to the bit line and the source line.

A memory device includes a memory array comprising a plurality of wordlines, and control logic, operatively coupled with the memory array. The control logic causes a measurement programming pulse to be sequentially applied to each of the plurality of wordlines of the memory array and determines respective threshold voltages stored in a number of memory cells associated with each of the plurality of wordlines. The control logic further determines a difference in the respective threshold voltages based on a location of the number of memory cells within each wordline and determines a respective resistance-capacitance (RC) time constant for each of the plurality of wordlines in view of the difference in the respective threshold voltages.

A memory device includes a memory array comprising a plurality of wordlines, and control logic, operatively coupled with the memory array. The control logic causes a measurement programming pulse to be sequentially applied to each of the plurality of wordlines of the memory array and determines respective threshold voltages stored in a number of memory cells associated with each of the plurality of wordlines. The control logic further determines a difference in the respective threshold voltages based on a location of the number of memory cells within each wordline and determines a respective resistance-capacitance (RC) time constant for each of the plurality of wordlines in view of the difference in the respective threshold voltages.

A nonvolatile semiconductor memory device comprises a cell unit including a first and a second selection gate transistor and a memory string provided between the first and second selection gate transistors and composed of a plurality of serially connected electrically erasable programmable memory cells operative to store effective data; and a data write circuit operative to write data into the memory cell, wherein the number of program stages for at least one of memory cells on both ends of the memory string is lower than the number of program stages for other memory cells, and the data write circuit executes the first stage program to the memory cell having the number of program stages lower than the number of program stages for the other memory cells after the first stage program to the other memory cells.

A nonvolatile semiconductor memory device comprises a cell unit including a first and a second selection gate transistor and a memory string provided between the first and second selection gate transistors and composed of a plurality of serially connected electrically erasable programmable memory cells operative to store effective data; and a data write circuit operative to write data into the memory cell, wherein the number of program stages for at least one of memory cells on both ends of the memory string is lower than the number of program stages for other memory cells, and the data write circuit executes the first stage program to the memory cell having the number of program stages lower than the number of program stages for the other memory cells after the first stage program to the other memory cells.

A semiconductor memory device includes a memory block, a plurality of bit lines, a plurality of select gate lines, a plurality of word lines, and a controller. The memory block includes a plurality of memory strings, each memory string including a selection transistor and a plurality of memory cells. The plurality of bit lines are arranged in the first direction and connected to the respective memory strings. The plurality of select gate lines are arranged in the second direction and connected to gates of the respective selection transistors of the memory strings. The plurality of word lines are arranged in the third direction and connected to gates of the respective memory cells of the memory strings. The controller is configured to perform an erase operation in a unit of the memory block, and perform a sequence of erase verify operations.

A semiconductor memory device includes a first and second substrates; and a first and second element layers respectively provided on an upper surface of the first and the second substrates. The first and second substrates respectively include a first and second vias. The first and second element layers respectively includes a first and second pads respectively electrically coupled to the first and second vias, and respectively provided on an upper surface of the first and second element layers. The upper surface of the second element layer is arranged so as to be opposed to the upper surface of the first element layer. The first and second pads are electrically coupled and symmetrically arranged with respect to a surface where the first and second element layers are opposed to each other.