A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

The present invention is directed towards a tubular nanosized magnetic wire, wherein the nanosized magnetic wire comprises: a tubular magnetic shell surrounding a longitudinal axis of the wire, at least one region of the tubular magnetic shell is capable of providing a 360 magnetic domain wall, wherein the 360 magnetic domain wall is self-stabilizing and has a magnetization going from a parallel alignment to a perpendicular alignment and to a parallel alignment with regards to the wire axis. The present invention also provides a practical method capable of making a tubular nanosized magnetic wire with a self-stabilizing, 360 magnetic domain wall. The present invention also relates to the use of the tubular nanosized magnetic wire in a racetrack memory device.

The present invention is directed towards a tubular nanosized magnetic wire, wherein the nanosized magnetic wire comprises: a tubular magnetic shell surrounding a longitudinal axis of the wire, at least one region of the tubular magnetic shell is capable of providing a 360 magnetic domain wall, wherein the 360 magnetic domain wall is self-stabilizing and has a magnetization going from a parallel alignment to a perpendicular alignment and to a parallel alignment with regards to the wire axis. The present invention also provides a practical method capable of making a tubular nanosized magnetic wire with a self-stabilizing, 360 magnetic domain wall. The present invention also relates to the use of the tubular nanosized magnetic wire in a racetrack memory device.

A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.

A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.

According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.

According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.