At least one magnetic nanowire including multiple cells; a write-read head combined with a first contact of the magnetic nanowire; and a read-only head combined with a second contact of the magnetic nanowire. Data stored through a write head included in the write-read head are read in sequence through a read head included in the write-read head in response to a last in first out (LIFO) method.

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter being generated, is such that 2>Wm>/2 and 2>hm>/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that W>/4 and 2>h>/2.

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3.Math.>Wm, where denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2.Math.>Hm, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

A magnetic storage apparatus is disclosed, and is configured to access data. The magnetic storage apparatus includes a magnetic storage track, a first write apparatus, a second write apparatus, and a drive apparatus. The first write apparatus and the second write apparatus are located at different positions on the magnetic storage track. The first write apparatus is configured to write first data 0 or second data 1. The second write apparatus is configured to write third data 2 and fourth data 3.

At least one magnetic nanowire including multiple cells; a write-read head combined with a first contact of the magnetic nanowire; and a read-only head combined with a second contact of the magnetic nanowire. Data stored through a write head included in the write-read head are read in sequence through a read head included in the write-read head in response to a last in first out (LIFO) method.

A system and method for providing a physically unclonable function (PFU) is described. In operation, the method includes applying a domain wall shift pulse challenge to a plurality of nanowires of a domain wall memory (DWM) array, wherein the nanowires of the domain wall memory (DWM) array have process induced variations, resulting in pinning potentials which affect the velocity of the domain walls along the length of the nanowires. Following the application of the domain wall shift pulse, the response to the challenge is determined by measuring the response of the plurality of nanowires of the domain wall memory to the applied domain wall shift pulse challenge to provide a physically unclonable function (PUF) for the integrated circuit.