An integrated circuit chip includes at least one driver circuit of single-ended structure and the first drive circuit, the first drive circuit and the at least one driver circuit of single-ended structure have the same structure, the first drive circuit includes a plurality of parallel-connected PMOS tubes and a plurality of parallel-connected NMOS tubes, the plurality of parallel-connected PMOS tubes connect the plurality of parallel-connected NMOS tube in series at a first node. After impedance calibration has been conducted, the chip confines a first impedance calibration code and a second impedance calibration code, and controls the at least one driver according to the first impedance calibration code and the second impedance calibration code; the first reference voltage is preferably configured to ¾ times of the supply voltage V.sub.DD, and the second reference voltage is preferably configured to ¼ times of the supply voltage V.sub.DD.

According to various aspects, a memory controller may schedule ZQ commands to periodically calibrate individual memory ranks in a multi-rank memory. The memory controller may schedule a ZQ short command at each ZQ interval and record that the ZQ short command was missed with respect to a memory rank in a self-refresh mode at the ZQ interval. After the missed ZQ short commands reaches a first threshold, a ZQ long command may be scheduled at the next ZQ interval and normal ZQ behavior may resume in the event that the memory rank exits the self-refresh mode and the ZQ long command is executed. However, if the memory rank stays in the self-refresh mode until missed ZQ long commands reaches a second threshold, the memory controller may trigger a ZQ long command once the memory rank exits the self-refresh mode and skip a next ZQ calibration before resuming normal ZQ behavior.

An electronic device includes a semiconductor memory unit. The semiconductor memory unit may include a cell array suitable for including a plurality of resistive memory cells which are arranged in a plurality of column lines and a plurality of rows lines, and a read circuit. The read circuit is suitable for, in a read operation, generating a bias current based on bias information, supplying the bias current to a sensing node, supplying a read current from the sensing node to a column line selected from among the plurality of column lines, and sensing data stored in a selected memory cell coupled to the selected column line using a voltage level at the sensing node. The bias information is determined and stored in the semiconductor memory unit before the read operation starts.

A non-volatile storage system includes a three dimensional structure comprising vertical columns of memory cells and a managing circuit in communication with the vertical columns. The managing circuit applies one or more patterns of stress voltages to the vertical columns, with different voltages applied to each vertical column of pairs of adjacent vertical columns being tested for shorts. The managing circuit tests for a short in the pairs of adjacent vertical columns after applying the one or more patterns of stress voltages. In one embodiment, the test may comprise programming a memory cell in each vertical column with data that matches the pattern of stress voltages, reading from the memory cells and determining whether data read matches data programmed. The applying of the stress voltages and the testing can be performed as part of a test during manufacturing or in the field during user operation.

A device may include a ZQ calibration circuit. The ZQ calibration circuit may include a first register configured to store a first impedance code generated responsive to a ZQ calibration command. The ZQ calibration circuit may also include a second register configured to store a shift value. Further, the ZQ calibration circuit may include a compute block configured to generate a second impedance code based on the first impedance code and the shift value. Systems and related methods of operation are also described.

A semiconductor device includes a first die connected to a first channel, the first die comprising a first memory chip; and a second die connected to a second channel, the second die comprising a second memory chip, the first and second channels being independent of each other and a storage capacity and a physical size of the second die being the same as those of the first die. The first and second dies are disposed in one package, and the package includes an interconnection circuit disposed between the first die and the second die to transfer signals between the first memory chip and the second memory chip.

Memory including an array of memory cells might include an input buffer having calibration circuitry, a first input, a second input, and an output; and calibration logic having an input selectively connected to the output of the input buffer and comprising an output connected to the calibration circuitry, wherein the calibration logic is configured to cause the memory to determine whether the input buffer exhibits offset while a particular voltage level is applied to the first and second inputs of the input buffer, and, in response to determining that the selected input buffer exhibits offset, apply an adjustment to the calibration circuitry while the particular voltage level is applied to the first and second inputs until a logic level of the output of the selected input buffer transitions.

An apparatus includes: a master die; one or more slave dies; a ZQ resister between a first node and a second node coupled to a voltage terminal; a ZQ pad coupled to each of the first node of the ZQ resister, the master die and the one or more slave dies; and a calibration channel electrically coupling the master die and the one or more slave dies, the calibration channel configured to communicate signals between the master die and the one or more slave dies for coordinating access to the ZQ pad across the master die and the one or more slave dies.

A device may include a number of drivers, wherein each driver of the number of drivers includes a number of transistors coupled to an output node. The device may further include circuitry coupled to the number of drivers. The circuitry may configure at least one driver of the number of drivers in each of a number of configurations, wherein each configuration of the number of configurations is associated with a calibration code of a number of calibration codes. Each configuration generates, in response to signal transmission via the output node, an associated channel performance response of a number of channel performance responses. The circuitry may also store a calibration code for the at least one unit driver, wherein the calibration code generates a desired channel performance response of the number of channel performance responses. Systems and related methods of operation are also described.

A code shift calculation circuit is provided. A first operation circuit of the code shift calculation circuit generates a first output value according to a temperature difference and a first change rate of a driving strength code to temperature. The temperature difference is a difference between a previous temperature when getting a previous ZQ command and a current temperature when getting a current ZQ command. A second operation circuit generates a second output value according to a voltage difference and a second change rate of the driving strength code to voltage. The voltage difference is a difference between a previous working voltage when getting the previous ZQ command and a current working voltage when getting the current ZQ command. A third operation circuit sums up the first output value and the second output value to generate a shift value, thereby adjusting the driving strength code calibrated by ZQ calibration.