Dynamic trim selection based on operating voltage levels for semiconductor devices and associated methods and systems are disclosed. Certain semiconductor devices are expected to operate under two or more operating voltage levels. In some embodiments, the semiconductor device can be characterized to determine optimum timing and/or voltage conditions across multiple operating voltage levels. Consequently, multiple sets of timing and/or voltage conditions can be identified depending on the operating voltage levels, which can be stored in a non-volatile memory (NVM) array of the semiconductor device. During operation, the semiconductor device can determine the operating voltage level currently supplied to the semiconductor device and select one of the timing and/or voltage conditions stored in the NVM array such that the semiconductor device can operate with the optimum timing and/or voltage conditions that has been predetermined for the semiconductor device operating under the operating voltage level.

A method, system and product including adapting a value of a delay parameter that is utilized in an operation of a memory-cell array, wherein the delay parameter influences a ratio between an operation portion of a clock cycle and a pre-charge portion of the clock cycle, wherein writing or reading to the memory-cell array is enabled during the operation portion of the clock cycle and is disabled during the pre-charge portion of the clock cycle, wherein said adapting comprises: initializing the delay parameter with an initial value; writing a first test data into the memory-cell array; attempting to read from the memory-cell array a second test data; comparing the first test data with the second test data; and selecting a target value for the delay parameter based on said comparing.

A 3D semiconductor device including: a first level including a first single-crystal layer, a plurality of first transistors, a first metal layer (includes interconnection of first transistors), and a second metal layer, where first transistors' interconnection includes forming logic gates; a plurality of second transistors disposed atop, at least in part, of logic gates; a plurality of third transistors disposed atop, at least in part, of the second transistors; a third metal layer disposed above, at least in part, the third transistors; a global grid to distribute power and overlaying, at least in part, the third metal layer; a local grid to distribute power to the logic gates, the local grid is disposed below, at least in part, the second transistors, where the second transistors are aligned to the first transistors with less than 40 nm misalignment, where at least one of the second transistors includes a metal gate.

A storage device includes a plurality of memory chips and a chip. The plurality of memory chips includes a first memory chip configured to generate a first signal based on a first clock signal, and a second memory chip configured to generate a second signal based on a second clock signal. The chip is configured to receive the first and second signals and generate and output a first and second comparison signal based on a duty cycle of the first and second signals. The first memory chip is further configured to generate a first corrected signal by adjusting a duty cycle of the first clock signal based on the first comparison signal, and the second memory chip is further configured to generate a second corrected signal by adjusting a duty cycle of the second clock signal based on the second comparison signal.

A signal width repair circuit and method, and an electronic device are provided. The signal width repair circuit includes: a delay unit, configured to receive an input signal, and delay the input signal for a preset duration to obtain a delayed signal, the input signal being a low-level signal; a signal reconstruction unit, configured to receive the input signal and the delayed signal, and repair the input signal and the delayed signal to obtain a repaired signal; and a signal selection unit, configured to receive the input signal and the repaired signal and select one of the input signal and the repaired signal for output, to obtain a target signal that has a width satisfying a preset width, the preset duration being equal to or greater than a duration with the preset width.

Calibration of devices communicating on a shared data bus may improve data integrity on the shared data bus by reducing duty cycle distortion. Duty cycle distortion may be reduced by adjusting timing of a transceiver in a device for communicating on the shared data bus using calibration codes. The calibration codes may be loaded into memory and used to reconfigure the transceiver timing on the shared data bus with reconfiguration occurring within one or more unit-intervals of time. The calibration code may be used, for example, to adjust a PMOS or NMOS trim circuit at the transceiver.

The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

Methods, systems, and devices for timing chains for accessing memory cells are described to implement some delays at logic circuitry under an array of memory cells. The memory array logic may represent CMOS under array logic circuitry. A bank group logic may generate a first memory operation and a longer delay corresponding to a timing between the first operation and a second operation. The first operation may represent an access operation, a precharging operation, or the like. The memory array logic may be signaled regarding the first operation and may generate one or more smaller delays associated with one or more sub-operations of the first operation. The smaller delays may be tunable, which may support a memory device or controller to implement operations or sub-operations with different timings based on different processes, different memory cell characteristics, or different temperatures, among other examples.

A resistor-capacitor (RC) sensor circuit of an electronic device is driven to a drive voltage using a representative copy of a current that drives an electronic circuit line of the electronic device. The RC sensor circuit is to sample voltages that are indicative of an RC time constant of the electronic circuit line. A first sample voltage is determined by sampling a first representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a first time period. A second sample voltage is determined by sampling a second representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a second time period. A ratio of the first sample voltage and the second sample voltage is indicative of the RC time constant of the electronic circuit line.

A computer-implemented method includes fetching, by a controller, data using a plurality of memory channels of a memory system. The method further includes detecting, by the controller, that a first memory channel of the plurality of memory channels has not returned data. The method further includes marking, by the controller, the first memory channel from the plurality of memory channels as unavailable. The method further includes, in response to a fetch, reconstructing, by the controller, fetch data based on data received from all memory channels other than the first memory channel.