An electronic device includes a strobe signal generation circuit and a data output control circuit. The strobe signal generation circuit delays a mode register command by a first predetermined delay period to generate a mode register strobe signal during a mode register read operation. The strobe signal generation circuit adjusts a timing of the mode register strobe signal by detecting variation of timings of first and second variable delay mode register commands, which is generated based on the mode register command, during the mode register read operation. The data output control circuit delays an operation code, which is generated based on the mode register command, by a second predetermined delay period to generate a delayed operation code. The data output control circuit outputs the delayed operation code as data in synchronization with the mode register strobe signal.

A memory chip is applied to the memory system, and the memory chip is configured to perform counting and obtain a count value after the memory chip is powered on and started, wherein the count value is used to represent a process corner of the memory chip, the memory chip further has a reference voltage with an adjustable value, the value of the reference voltage is adjustable based on the count value, and the memory chip adjusts, based on the reference voltage, a delay from reading out data from a memory cell to outputting the data through a data port.

A memory controller having a data receiver to sample data at a sample timing using a strobe signal, wherein the data and the strobe signal are sent by a memory device in connection with a read operation initiated by the memory controller, and a strobe receiver to receive the strobe signal, wherein a phase of the strobe signal has a drift relative to a reference by an amount. The memory controller further having a monitoring circuit to monitor the strobe signal and determine the amount of the drift, and an adjustment circuit to update the sample timing of the data receiver based on the amount of drift determined by the monitoring signal.

Methods and apparatus for using characterized devices such as memories. In one embodiment, characterized memories are associated with a range of performances over a range of operational parameters. The characterized memories can be used in conjunction with a solution density function to optimize memory searching. In one exemplary embodiment, a cryptocurrency miner can utilize characterized memories to generate memory hard proof-of-work (POW). The results may be further validated against general compute memories; such that only valid solutions are broadcasted to the mining community. In one embodiment, the validation mechanism is implemented for a plurality of searching apparatus in parallel to provide a more distributed and efficient approach. Various other applications for characterized memories are also described in greater detail herein (e.g., blockchain, social media, machine learning, probabilistic applications and other error-tolerant applications).

A method for predicting high-temperature operating life of an integrated circuit (IC) includes performing bias temperature instability tests and high-temperature operating life tests on a device of the IC, establishing a relationship between the device bias temperature instability and the IC's high-temperature operating life based on a result of the bias temperature instability tests and the high-temperature operating life tests. The method further includes providing a lot of subsequent integrated circuits (ICs), performing wafer-level bias temperature instability tests on a device of the ICs, and predicting high-temperature operating life of the ICs based on a result of the wafer-level bias temperature instability tests and based on the established relationship between the device's bias temperature instability and the IC's high-temperature operating life. The method can save significant effort and time over conventional approaches for accurate prediction of high-temperature operating life of an IC.

An electronic device includes a flag generation circuit and a delay circuit. The flag generation circuit is configured to generate a flag signal, wherein a level of the flag signal changes based on a first internal command. The delay circuit is configured to generate a delay signal by delaying one of an operation signal and the flag signal by a predetermined period according to whether a predetermined operation is performed.

A duty adjustment circuit, and a delay locked loop circuit and a semiconductor memory device including the same are provided. The duty adjustment circuit includes a pulse generator configured to generate a pulse signal at a constant pulse width regardless of a frequency of a reference clock signal, based on frequency information, a code generator configured to generate a first predetermined number of delayed pulse signals by delaying the pulse signal, as a first code in response to the pulse signal, and a duty adjuster configured to receive a delay clock signal, and generate a duty correction clock signal by adjusting a slope of rising transition and a slope of falling transition of the delay clock signal in response to the first code and a second code.

A device and method are presented. Largest and smallest successful values of a receive clock delay and a transmit clock delay are determined. A first set of parameters for an SPI coupled to a DDR flash memory are set, including the largest successful values of the transmit clock delay and the receive clock delay, and a first value of a RD cycle. A second set of parameters for the SPI are set, including the smallest successful value of the transmit clock delay and receive clock delay, and a second value of the RD cycle. One of the first and second sets of parameters is selected based on whether the first or second set of parameters results in successfully reading from the DDR flash memory over a larger range of operating temperatures. The SPI is programmed using the selected one of the first and second sets of parameters.

Circuitry and methods of operating the same to strobe a DQ signal with a gated DQS signal are described. Some aspects are directed to a gating scheme to selectively pass a received strobe signal such as a DQS strobe signal based on a state of a drive enable (DE) signal in a drive circuit in the ATE, such that edges generated by the drive circuit are prevented from mistakenly strobing a received data signal such as a DQ signal.

A controller for data strobe signal (DQS) position adjustment includes, when the controller obtains margin effective widths of all data signals in a transmission bus, it determines a left boundary and a right boundary based on the margin effective widths, where the left boundary is a largest value in minimum values of the margin effective widths of all the DQs, and the right boundary is a smallest value in maximum values of the corresponding margin effective widths when all the DQs are aligned with the left boundary. The controller calculates a first central position based on the left boundary and the right boundary, where the first central position is a center of a smallest margin effective width obtained after all the DQs are aligned during read data training, and adjusts a delay line (DL) of the DQS to the first central position.