A semiconductor device, the device including: a first level including control circuits, where the control circuits include a plurality of first transistors and a plurality of metal layers; and a memory level disposed on top of the first level, where the memory level includes an array of memory cells, where each of the memory cells includes at least one second transistor, where the control circuits control access to the array of memory cells, where the first level is bonded to the memory level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, and where at least a portion of the array of memory cells is disposed directly above at least one of the plurality of metal to metal bonding regions.

Memory devices are disclosed. A memory device may include a number of column planes, and at least one circuit. The at least one circuit may be configured to receive test result data for a column address for each column plane of the number of column planes of the memory array. The at least one circuit may also be configured to convert the test result data to a first result responsive to only one bit of a number of bits of the number of column planes failing a test for the column address. Further, the at least one circuit may be configured to convert the test result data to a second result responsive to only one column plane failing the test for the column address and more than one bit of the one column plane being defective. Methods of testing a memory device, and electronic systems are also disclosed.

An address refresh circuit and method, a memory, and an electronic device are provided. The address refresh circuit includes a selection circuit and a decoding circuit. The selection circuit is configured to acquire a strobe signal, a redundancy address signal and a normal address signal, and select, within each of a first pulse duration and a second pulse duration and based on the strobe signal, one of the redundancy address signal or the normal address signal as a target address signal; the first pulse duration and the second pulse duration belong to the same refresh cycle, and the second pulse duration is later than the first pulse duration. The decoding circuit is configured to decode the target address signal to obtain and output a decoded signal.

Apparatuses for memory repair for a memory device are described. An example apparatus includes: a non-volatile storage element that stores information; a storage latch circuit coupled to the non-volatile storage element and stores latch information; and a control circuit that, in a first repair mode, receives first repair address information, provides the first repair address information to the non-volatile storage element, and further transmits the first repair address information from the non-volatile storage element to the storage latch circuit. The control circuit, in a second repair mode, receives second repair address information and provides the second repair address information to the storage latch circuit and disables storing the second address information into the non-volatile storage element.

Memory devices are disclosed. A memory device may include a number of column planes, and at least one circuit. The at least one circuit may be configured to receive test result data for a column address for each column plane of the number of column planes of the memory array. The at least one circuit may also be configured to convert the test result data to a first result responsive to only one bit of a number of bits of the number of column planes failing a test for the column address. Further, the at least one circuit may be configured to convert the test result data to a second result responsive to only one column plane failing the test for the column address and more than one bit of the one column plane being defective. Methods of testing a memory device, and electronic systems are also disclosed.

A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

A device includes input/output (IO) circuits, a redundant IO circuit and a redundant IO control unit. The input/output (IO) circuits coupled to a memory array. The redundant IO circuit is coupled to the memory array and the plurality of IO circuits. The redundant IO control unit is coupled to the IO circuits and the redundant IO circuit. In response to a failure column address signal, the redundant IO control unit configures the redundant IO circuit to substitute a failed IO circuit of the IO circuits. The redundant IO control unit includes a storage circuit, and during a shutdown mode, the storage circuit is configured to store the failure column address signal.

Methods, systems, and apparatuses for redundancy in a memory array are described. A memory array may include some memory cells that are redundant to other memory cells of the array. Such redundant memory cells may be used if a another memory cell is discovered to be defective in some way; for example, after the array is fabricated and before deployment, defects in portions of the array that affect certain memory cells may be identified. Memory cells may be designated as redundant cells for numerous other memory cells of the array so that a total number of redundant cells in the array is relatively small fraction of the total number of cells of the array. A configuration of switching components may allow redundant cells to be operated in a manner that supports redundancy for numerous other cells and may limit or disturbances to neighboring cells when accessing redundancy cells.

A system may be provided that provides redundancy for a plurality of embedded memories such as SRAMs. The system may include one or more decoders, each capable of decoding a selection address to identify a defective one of the embedded memories.

An electronic device includes an error correction circuit configured to detect an error included in internal data, to generate a failure detection signal during a read operation, and to correct the error included in the internal data during a refresh operation, and a core circuit configured to store an address signal for activating a word line in which the internal data including the error is stored through as a failure address signal when the failure detection signal is input to the core circuit, and store the error-corrected internal data in the core circuit through a word line activated by the failure address signal during the refresh operation.