A method for repairing a failed bit includes: acquiring a repair specification of redundancy of a chip where the failed bit is located; standardizing the repair specification of the redundancy to obtain a standardized repair specification; acquiring the position of the failed bit on the chip; processing the position of the failed bit on the chip according to the standardized repair specification to obtain standardized position of the failed bit; allocating the redundancy by the redundancy allocation algorithm according to the standardized position of the failed bit and the standardized repair specification to obtain standardized repair position of the redundancy; and restoring the standardized repair position of the redundancy to the repair a position of the redundancy on the chip according to the standardized repair specification to repair the failed bit.

A memory device includes at least one first register, a memory circuit, an analyzing circuit, and a control circuit. The memory circuit includes a plurality of bit cells. The analyzing circuit is configured to perform an analyzing process on the bit cells to generate an analyzing result. If the analyzing result indicates that a first bit cell of the bit cells fails, the control circuit establishes a repair process by controlling data to be written into the at least one first register and controlling the data to be read out from the at least one first register.

The present disclosure in the field of memory technology proposes a programmable storage cell, a programmable storage array and a reading and writing method for the programmable storage array. The programmable storage cell includes: a first anti-fuse element connected between a first power terminal and an output terminal, a second anti-fuse element connected between the second power terminal and the output terminal, and a third switch unit connected to the output terminal, a third power terminal and a position signal terminal, where the third switch unit responds to the signal from the position signal terminal so as to connect the third power terminal and the output terminal. The programmable storage cell has a simple structure and a high reading speed.

A redundancy analysis method of replacing a faulty part of a memory with at least one spare according to the present embodiment includes: acquiring fault information of the memory; and redundancy-allocating the fault with combinations of the spares to correspond to combination codes corresponding to the combinations of the spares, in which, the redundancy-allocating with the combination of the spare areas includes performing parallel processing on each combination of the spares.

A refresh circuit includes signal selector configured to select one of normal and redundant word line logical addresses as output, output signal of which is designated as first logical address; row address latch connected to output terminal of signal selector and configured to output row hammer address and row hammer flag signal according to first logical address; seed arithmetic unit connected to output terminal of row address latch and configured to generate seed address according to row hammer address; logical arithmetic unit connected to output terminal of seed arithmetic unit and configured to obtain row hammer refresh address according to seed address, row hammer refresh address is adjacent physical address of seed address; and pre-decode unit connected to output terminal of logical arithmetic unit and configured to receive row hammer refresh address, and convert it into physical address to be used by memory array of memory to perform refresh operation.

A memory device includes a plurality of memory chips storing and outputting data in response to a control command and an address command, at least one ECC memory chip providing an error check and correction (ECC) function on the data stored and output by the plurality of the memory chips, and a controller, marking a memory chip in which a defective memory cell is detected among the plurality of memory chips, as a defective memory chip, storing data of the defective memory chip in the ECC memory chip, and controlling the defective memory chip to execute a post package repair (PPR).

A repair circuit includes: a plurality of redundant memory cells, each redundant memory cell being configured with a state signal; and a repair module connected to the plurality of redundant memory cells and configured to determine target memory cells from the redundant memory cells based on the state signals and repair defective memory cells through the target memory cells. The target memory cells are in one-to-one correspondence to the defective memory cells. The repair module can repair, at each of multiple repair stages, different defective memory cells, the plurality of redundant memory cells being shared at the multiple repair stages.

An apparatus is provided having a memory device and associated access control circuitry, and an additional memory device and associated additional access control circuitry. Redundant data generation circuitry generates, for a given block of data having an associated given memory address, an associated block of redundant data for use in an error detection process. The access control circuitry is arranged to store, at a location in the memory device determined from the given memory address, at least a portion of the given block of data and a first copy of the associated block of redundant data, and the additional access control circuitry is arranged to store, at a location in the additional memory device determined from the given memory address, any remaining portion of the given block of data not stored in the memory device and a second copy of the associated block of redundant data. Error detection circuitry performs the error detection process on the stored given block of data using one copy of the associated block of redundant data, and generates an output signal indicating a result of the error detection process. Comparison circuitry compares the first and second copies of the associated block of redundant data, and generates a comparison result signal to supplement the output signal from the error detection circuitry.

A redundancy managing method and apparatus for semiconductor memories is disclosed. The redundancy managing method for semiconductor memories utilizes bitmap type storage by defining an appropriate storage space according to the type of a fault.

The present disclosure provides an operation method related to a post package repair (PPR) function in a dynamic random access memory (DRAM) device. The method for operating a post package repair (PPR) function of a memory device is disclosed. The method includes providing a memory bank, which includes a memory array and a sense amplifier adjacent to the memory array, wherein the memory array comprises at least one defective row and at least one associated row, and the at least one associated row is electrically connected to the sense amplifier by a plurality of bit lines. The method also includes arranging a redundant row adjacent to the memory array, wherein the redundant row is electrically connected to the sense amplifier by the plurality of bit lines. The method also includes activating the at least one associated row to transmit data in the at least one associated row to the sense amplifier, latching the data in the sense amplifier; activating the redundant row, and transmitting the data from the sense amplifier to the redundant row.