A non-volatile memory includes: a plurality of user data storage blocks configured to store user data; a user setting storage block configured to store a bad block address table; and a controller configured to perform: executing a first erase operation on one of the plurality of user data storage blocks according to an external instruction; executing a second erase operation on the one of the plurality of user data storage blocks in response to failure of the first erase operation; marking the one of the plurality of user data storage blocks as a bad block in response to failure of the second erase operation; and updating the bad block address table stored in the user setting storage block according to the bad block newly marked. An operation method of the non-volatile memory is also provided.

The present application discloses an apparatus for testing defects of a memory module comprises a central buffer for generating a test write command and a test read command to indicate testing to a target address in a memory module; and a data buffer coupled to the central buffer to receive the test write command and the test read command; the data buffer is configured to, in response to the test write command, use target data as repair data corresponding to the target address, and write the target data into the memory module; and, in response to the test read command, to read target data from the target address and compare the target data with the repair data, and to send to the central buffer a comparison result of the target data and the repair data; the central buffer is further configured to record the target address as a tested address when generating the test write command, and determine whether to add the tested address to defective address information based on the comparison result associated with the tested address, defective address information is to indicate one or more defective memory addresses in the memory module.

In certain aspects, a memory device includes an array of memory cells, an input/output (I/O) circuit, and control logic coupled to the I/O circuit. The array of memory cells includes a plurality of banks including a plurality of main banks and a redundant bank. The I/O circuit is coupled to each pair of adjacent banks of the plurality of banks and configured to direct a piece of data to or from either bank of each pair of adjacent banks. The control circuit is configured to select one bank of each pair of adjacent banks based on bank fail information indicative of a failed main bank of the plurality of main banks. The control circuit is further configured to control the I/O circuit to direct the piece of data to or from the selected bank of each pair of adjacent banks.

In certain aspects, a memory device includes an array of memory cells, an input/output (I/O) circuit, and I/O control logic coupled to the I/O circuit. The array of memory cells includes P groups of banks. P redundant banks are included in and shared by the P groups of banks. The I/O circuit is coupled to the P groups of banks and configured to direct P×N pieces of data to or from P×N working banks, respectively. The I/O control logic is configured to determine the P×N working banks from the P groups of banks based on bank fail information indicative of K failed main banks from the P groups of banks. The P×N working banks include K redundant banks of the P redundant banks. The I/O control logic is also configured to control the I/O circuit to direct P×N pieces of data to or from the P×N working banks, respectively.

A memory array arranged as a plurality of memory cells. The memory cells are configured to operate at a determined voltage. A memory management circuitry coupled to the plurality of memory cells tags a first set of the plurality of memory cells as low-voltage cells and tags a second set of the plurality of memory cells as high-voltage cells. A power source provides a low voltage to the first set of memory cells and provides a high voltage to the second set of memory cells based on the tags.

A method of failure mapping is provided. The method includes distributing user data throughout a plurality of storage nodes through erasure coding, wherein the plurality of storage nodes are housed within a chassis that couples the storage nodes as a storage cluster. Each of the plurality of storage nodes has a non-volatile solid-state storage with flash memory or other types of non-volatile memory and the user data is accessible via the erasure coding from a remainder of the plurality of storage nodes in event of two of the plurality of storage nodes being unreachable. The method includes determining that a non-volatile memory block in the memory has a defect and generating a mask that indicates the non-volatile memory block and the defect. The method includes reading from the non-volatile memory block with application of the mask, wherein the reading and the application of the mask are performed by the non-volatile solid-state storage.

A solid-state drive (SSD) is configured for dynamic resizing. When the SSD approaches the end of its useful life because the over-provisioning amount is nearing the minimum threshold as a result of an increasing number of bad blocks, the SSD is reformatted with a reduced logical capacity so that the over-provisioning amount may be maintained above the minimum threshold.

A memory apparatus and method of operation is provided. The apparatus has blocks each including non-volatile storage elements. Each of the non-volatile storage elements stores a threshold voltage representative of an element data. The apparatus also includes one or more managing circuits configured to erase at least one of the blocks in an erase operation and program the element data in a program operation. The one or more managing circuits are also configured to proactively identify ones of the blocks as potential bad blocks and selectively apply stress to the ones of the blocks identified as the potential bad blocks and determine whether the potential bad blocks should be retired from the erase and program operations and put in a grown bad block pool or released to a normal block pool used for the erase and program operations based on a judgment after selectively applying the stress.

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, bypassing the first plane when applying a second program pulse after the first program pulse.

A memory controller for controlling a memory device including memory blocks is provided. The memory controller includes: a garbage collection state determiner in communication with a host device and configured to receive a garbage collection state request from the host device and determine whether the memory device is in a state that garbage collection is necessary and a block information storage unit in communication with the garbage collection state determiner and configured to receive, from the memory device, bad block generation information including a number of bad blocks included in the memory device that are unable to store data, and store block information including a total number of the memory blocks, the number of bad blocks, and a number of free blocks included in the memory device that are assigned for garbage collection.