A memory system includes a memory device; a short super block detecting unit suitable for forming, when one or more initial bad blocks remain in an original super block after a re-mapping operation is performed and a number of the initial bad blocks is equal to or less than a predetermined threshold value within the original super block, a short super block with memory blocks included in the original super block; a bitmap generating unit suitable for generating a bitmap representing whether each of the memory blocks included in the short super block is a normal block or an initial bad block; and a processor suitable for controlling the memory device to simultaneously perform a normal operation on normal blocks among the memory blocks included in the short super block based on the bitmap.

An information handling system includes interleaved dual in-line memory modules (DIMMs) that are partitioned into logical partitions, wherein each logical partition is associated with a namespace. A DIMM controller sets a custom DIMM-level namespace-based threshold to detect a DIMM error and to identify one of the logical partitions of the DIMM error using the namespace associated with the logical partition. The detected DIMM error is repaired if it exceeds an error correcting code (ECC) threshold.

Apparatuses, systems, and methods to perform continuous read operations are described. A system configured to perform such continuous read operations enables improved access to and processing of data for performance of associated functions. For instance, one apparatus described herein includes a memory device having an array that includes a plurality of pages of memory cells. The memory device includes a page buffer coupled to the array and a continuous read buffer. The continuous read buffer includes a first cache to receive a first segment of data values and a second cache to receive a second segment of the data values from the page buffer. The memory device is configured to perform a continuous read operation on the first and second segments of data from the first cache and the second cache of the continuous read buffer.

A data storage device may include: a storage configured as a group of a plurality of memory blocks; and a controller configured to: control data input/output of the storage according to a request transferred from a host device; configure one or more first block groups by grouping a preset number of memory blocks which are selected at the same time among the memory blocks during an operation of the storage; configure one or more second block groups by replacing a bad memory block of the respective first block groups with a spare memory block; manage as a special block group a second block group where the spare memory block having replaced the bad memory block is not present in the same plane of the bad memory block, among the second block groups; and write data having a preset property to the special block group.

A memory system may include: a memory device including a plurality of memory blocks; and a controller suitable for grouping the memory blocks based on type into a plurality of super blocks according to a preset condition and managing the memory blocks by managing the super blocks, the controller may manage one or more of the super blocks, in each of which at least one bad memory block and good memory blocks are grouped, by classifying the one or more superblocks as first super blocks, and the controller may differently manage uses of the respective first super blocks based on the numbers of bad memory blocks included in the respective first super blocks.

A method of failure mapping is provided. The method includes determining that a non-volatile memory block in the memory has a defect and generating a mask that indicates the non-volatile memory block and the defect. The method includes reading from the non-volatile memory block with application of the mask, wherein the reading and the application of the mask are performed by the non-volatile solid-state storage.

Apparatuses, systems, and methods to perform continuous read operations are described. A system configured to perform such continuous read operations enables improved access to and processing of data for performance of associated functions. For instance, one apparatus described herein includes a memory device having an array that includes a plurality of pages of memory cells. The memory device includes a page buffer coupled to the array and a continuous read buffer. The continuous read buffer includes a first cache to receive a first segment of data values and a second cache to receive a second segment of the data values from the page buffer. The memory device is configured to perform a continuous read operation on the first and second segments of data from the first cache and the second cache of the continuous read buffer.

A memory system may include: a memory device including a plurality of memory blocks; and a controller suitable for grouping the memory blocks based on type into a plurality of super blocks according to a preset condition and managing the memory blocks by managing the super blocks, the controller may manage one or more of the super blocks, in each of which at least one bad memory block and good memory blocks are grouped, by classifying the one or more superblocks as first super blocks, and the controller may differently manage uses of the respective first super blocks based on the numbers of bad memory blocks included in the respective first super blocks.

A dynamic random access memory (DRAM) device includes a plurality of bank groups of first storage cells, each bank group arranged as a plurality of banks, each bank arranged as a plurality of rows, and each row including a plurality of dynamic storage cells. The DRAM device further includes a post-package repair (PPR) storage array arranged as a plurality of entries, wherein the DRAM device is configured to map a first row failure in a first bank group to a first entry of the PPR storage array, and to map a second row failure in a second bank group to a second entry of the PPR storage array.

A memory device includes a memory region; and an access unit suitable for setting an offset value according to control of an external device, changing, in response to an access command of the external device for a first address of the memory region, the first address into a second address of the memory region based on the offset value, and performing an access operation for the second address.