A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine circuit, an error information register and a control logic circuit. The memory cell array includes memory cell rows. The control logic circuit controls the ECC engine circuit to generate an error generation signal based on performing a first ECC decoding on first sub-pages in a first memory cell row in a scrubbing operation and based on performing a second ECC decoding on second sub-pages in a second memory cell row in a normal read operation on the second memory cell row. The control logic circuit records error information in the error information register and controls the ECC engine circuit to skip an ECC encoding and an ECC decoding on a selected memory cell row of the first memory cell row and the second memory cell row based on the error information.

Methods and apparatus for dynamically adjusting performance of partitioned memory. In one embodiment, the method includes receiving one or more configuration requests for the memory device, determining whether to grant the one or more configuration requests for the memory device, in response to the determining, implementing the one or more configuration requests within the memory device and operating the memory device in accordance with the implementing. The adjusting of the performance for the partitioned memory includes one or more of enabling/disabling refresh operations, altering a refresh rate for the partitioned memory, enabling/disabling error correcting code (ECC) circuitry for the partitioned memory, and/or altering a memory cell architecture for the partitioned memory. Systems and applications that may benefit from the dynamic adjustment of performance are also disclosed.

The provided is a method of controlling a dynamic random-access memory (DRAM) device comprising: storing a plurality of pieces of data consisting of a plurality of bits in a memory in a transposed manner; setting at least one refresh period for each of a plurality of rows constituting the memory; and performing a refresh operation of the memory on the basis of the set refresh period.

Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

Methods, apparatuses, and systems related to combining and utilizing multiple memory circuits having complementary characteristics are described. An apparatus may include a first memory circuit having a first emphasized characteristic and a second memory circuit having a second emphasized characteristic. The first and second memory circuits may be connected in parallel and to a common interface configured to communicate data between the apparatus and an external device.

A memory system includes: a memory device that includes a plurality of ranks; and a memory controller suitable for deciding a plurality of refresh cycles for respective combinations of the plurality of ranks and at least one program executed onto the memory device based on a performance diagnosis result of each of the ranks when the program is executed, and controlling a refresh operation to be performed onto the ranks based on the decided refresh cycles.

Methods, systems, and devices for an error correcting code scrub scheme are described. A memory device may correct an error associated with a first data bit or a first parity bit of a plurality of data bits and a plurality of parity bits, respectively. The memory device may correct the error by reading each of the plurality of data bits and the plurality of parity bits from a memory array, and determining that an error associated with a single bit exists. The memory device may then correct the determined single-bit error, and may write the corrected bit directly back to the memory array.

Methods, systems, and apparatuses for memory (e.g., DRAM) having an error check and scrub (ECS) procedure in conjunction with refresh operations are described. While a refresh operation reads the code words of a memory row, ECS procedures may be performed on some of the sensed code words. When the write portion of the refresh begins, a code word discovered to have errors may be corrected before it is written back to the memory row. The ECS procedure can be incremental across refresh operations, beginning, for example, each ECS at the code word where the pervious ECS for that row left off. The ECS procedure can include an out-of-order (OOO) procedure where ECS is performed more often for certain identified code words.

A memory system includes a memory module comprising a plurality of memory devices, and a memory controller suitable for controlling the plurality of memory devices to perform a refresh operation or performing an error correction code (ECC) operation on the plurality of memory devices, according to a refresh operation request.

A deferred error correction code (ECC) scheme for memory devices is disclosed. In one embodiment, a method is disclosed comprising starting a deferred period of operation of a memory system in response to detecting the satisfaction of a condition; receiving an operation during the deferred period, the operation comprising a read or write operation access one or more memory banks of the memory system; deferring ECC operations for the operation; executing the operation; detecting an end of the deferred period of operation; and executing the ECC operations after the end of the deferred period.