Briefly, in accordance with one or more embodiments, an apparatus comprises a memory comprising one or more physical memory chips, and a processor to implement a working set monitor to monitor a working set resident in the one or more physical memory chips. The working set monitor is to adjust a number of the physical memory chips that are powered on based on a size of the working set.

Various additional and alternative aspects are described herein. In some aspects, the present disclosure provides a method of controlling a memory of a computing device by an adaptive memory controller. The method includes collecting usage data from the computing device over a first bin, wherein the first bin is associated with a first weight, wherein the first weight is indicative of one or more of a first partial array self-refresh (PASR) setting a first partial array auto refresh (PAAR) setting and a first deep power down (DPD) setting. The method further includes associating the collected data with a second weight, adapting the first bin based on the second weight, wherein the second weight is indicative of one or more of a second PASR, PAAR, and DPD setting. The method further includes controlling the memory during the next first bin based on the second weight.

Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.

The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

A refresh control method for a memory controller of a memory system is provided. The memory controller is connected with a memory. The memory includes plural memory banks. The refresh control method includes the following steps. Firstly, a refresh state of the memory device is read, and thus a refresh window is realized. Then, a refresh command is issued to the memory device according to the refresh state. The refresh command contains a memory bank number field and a memory bank count field. The memory bank count field indicates a first count. The first count of memory banks are selected from the plural memory banks of the memory device according to the memory bank number field and the first count. Moreover, a refresh operation is performed on the first count of memory banks.

A volatile memory device and a self-refresh method thereof are provided. The volatile memory device includes a dynamic memory array. The self-refresh method includes transmit a self-refresh request signal when entering a power saving mode. A voltage boost signal is periodically enabled according to the self-refresh request signal. When the enabled voltage boost signal is detected, an operating voltage for driving a self-refresh operation is pulled up to a self-refresh level. When the operating voltage is pulled up to the self-refresh level, the dynamic memory array is self-refreshed. When the self-refresh operation is completed, the operating voltage is floated.

The disclosed embodiments describe methods, devices, and computer-readable media for protecting the integrity of volatile memory devices. In one embodiment, a method is disclosed comprising detecting a power interrupt condition of a memory device; and executing at least one operation in response to detecting the power interrupt condition, the operation selected from the group of operations consisting of: placing the memory device in a pre-charge mode, pausing a self-refresh mode of the memory device, forcing the memory device into a reset mode, or rewriting data in the memory device.

A method and memory device of controlling a plurality of low power states are provided. The method includes: entering a low power mode state, in which memory cell rows of the memory device are refreshed and power consumption is lower than in a self-refresh mode state, in response to a low power state entry command; and exiting the low power mode state based on a low power mode exit latency time that is set in a mode register of the memory device or at least one of an alarm signal and a low power mode exit command.

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to enable a start signal and an oscillation signal based on the reset signal. The oscillation signal starts to oscillate in response to the reset signal.

A memory device includes a target clock generation circuit suitable for generating a target clock by dividing a frequency of an internal clock at a set ratio, a delay circuit suitable for generating first to N.sup.th delay clocks having first to N.sup.th pulse widths that gradually increase, in synchronization with the target clock, a flag detection circuit suitable for filtering the first to N.sup.th delay clocks based on the target clock to generate first to N.sup.th flag signals and decoding the first to N.sup.th flag signals to generate first to (N1).sup.th current control signals, and a buffer circuit suitable for adjusting an amount of current based on the first to (N1).sup.th current control signals, and buffering an externally inputted signal using the adjusted amount of current.