Memory having an array of memory cells might include control logic configured to cause the memory to program each memory cell of a plurality of memory cells whose respective data state is higher than or equal to a first particular data state of a plurality of data states while inhibiting programming of each memory cell of the plurality of memory cells whose respective data state is lower than the first particular data state, and program each memory cell of the plurality of memory cells whose respective data state is lower than or equal to a second particular data state of the plurality of data states after programming each memory cell of the plurality of memory cells whose respective data state is higher than or equal to the first particular data state.

Aspects of a storage device including a plurality of dies and a controller are provided which allow for asymmetric die operation handling so that controller overheads associated with common resource intensive operations may be incurred in the background without delaying subsequent die operations. When the controller receives a command to perform an MLC operation such as programming a number of dies, the controller refrains from performing the MLC operation in one or more of the dies for a period of time while simultaneously performing the MLC operation in a remainder of the dies. Instead, the controller performs another operation, such as an SLC operation, another MLC operation, or a transfer operation, that involves a common resource in these dies during the period of time. Controller overheads associated with these other operations thus are incurred without creating bottlenecks when the number of dies is large, thereby improving storage device performance.

Provided herein may be a memory device capable of completing a foggy-fine program operation in one ready/busy period. The memory device may include a plurality of memory cells configured to form a plurality of pages, a peripheral circuit configured to perform a first program operation on a page adjacent to a selected page among the plurality of pages, and perform a second program operation on the selected page and control logic configured to control the peripheral circuit, during the first program operation, to successively receive least significant bit (LSB) page data, center significant bit (CSB) page data, and most significant bit (MSB) page data from a memory controller, and program the LSB page data to the page adjacent to the selected page and during the second program operation, to program the LSB page data programmed to the page adjacent to the selected page, the CSB page data and the MSB page data to the selected page.

A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.

Apparatuses, systems, and methods are disclosed for concurrently programming non-volatile storage cells, such as those of an SLC NAND array. The non-volatile storage cells may be arranged into a first block comprising a first string of storage cells that intersects with a first word line at a first storage cell, a second block comprising a second string of storage cells that intersects with a second word line at a second storage cell, a bit line electrically connectable to the first string and the second string, and controller configured to apply a programming pulse, at an elevated voltage, to the first word line and second word line to concurrently program the first and second storage cells.

Described herein are embodiments related to first-pass dynamic program targeting (DPT) operations on memory cells of memory systems. A processing device determines that a first programming pass of a programming operation has been performed on a memory cell of a memory component. The processing device, before a second programming pass of the programming operation is performed on the memory cell, determines information about a first programming distribution and a second programming distribution of the memory cell, the first programming distribution corresponding to a first page type and the second programming distribution corresponding to a second page type. The processing device adjusts, using the information, a placement of the first programming distribution relative to the second programming distribution that balances a bit error rate (BER) between the first page type and the second page type.

A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.

Apparatuses, systems, and methods are disclosed for concurrently programming non-volatile storage cells, such as those of an SLC NAND array. The non-volatile storage cells may be arranged into a first block comprising a first string of storage cells that intersects with a first word line at a first storage cell, a second block comprising a second string of storage cells that intersects with a second word line at a second storage cell, a bit line electrically connectable to the first string and the second string, and controller configured to apply a programming pulse, at an elevated voltage, to the first word line and second word line to concurrently program the first and second storage cells.

An electronic device includes: a storage device containing a target block having multiple word lines and multiple bit lines; a transmission interface configured to operably receive data to be written into the storage device; and a controller circuit including: an access circuit; and a flash memory control circuit configured to operably control the access circuit to write a first data into one or more pages connected with a first word line in the target block using a first program scheme, and to operably control the access circuit to write a second data into one or more pages connected with a second word line in the target block using a second program scheme, so that the first data and the second data are stored in the target block at the same time.

A memory system comprises a plurality of memory dies and a controller (or other control circuit) connected to the memory dies. To reduce the time it takes for the memory system to program data and make that programmed data available for reading by a host (or other entity), as well as persistently store the data in a compact manner that efficiently uses space in the memory system, the data is concurrently programmed as single bit per memory cell (fast programming) and multiple bits per memory cell (compact storage). To accomplish this programming strategy, the controller concurrently transfers data to be programmed to a first memory die and a second memory die. The transferred data is programmed in the first memory die at a single bit per memory cell and in the second memory die at multiple bits per memory cell.